Low-voltage forming-free flexible memristors with multifunctionality for hybrid storage and cryptographic random number generation in edge devices

Xiangke Wang, Hao Wang, Dongliang Yang, Yinan Lin, Ruitong Bie, Renjing Xu*, Linfeng Sun*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

With the rapid development of edge computing and Internet of Things (IoT) technologies, achieving efficient data processing and secure encryption in resource-constrained environments has become an urgent challenge. Traditional edge devices typically rely on separate modules for data storage and encryption, which increases hardware complexity and power consumption while limiting system integration. An ideal true random number generator (TRNG) for edge scenarios should offer high entropy, low power consumption, and minimal hardware overhead. In this work, we propose a low-voltage, forming-free, multifunctional flexible memristor based on a Ti₃C₂ MXene-doped polyethyleneimine (PEI) composite. By precisely tuning the doping concentration, the device enables dual functionalities of non-volatile memory and TRNG within a single architecture. The incorporation of Ti₃C₂ MXene effectively modulates the local electric field and ion migration pathways, which stabilizes the formation and uniformity of conductive filaments and induces statistically distributed switching delays under identical voltage stimuli. These delay characteristics serve as a high-entropy physical source for true random number generation. Compared to undoped devices, the MXene-doped memristor exhibits improved switching uniformity, lower operating voltage, enhanced endurance, and greater stochasticity in delay distributions. The device achieves both stable memory performance and high-quality TRNG functionality without additional circuitry. Owing to its low power consumption, mechanical flexibility, and integrated dual-mode operation, the proposed device shows strong promise for next-generation edge computing systems with strict demands on security and energy efficiency. This study offers new insight into polymer-based memristor design and highlights the potential of MXene-doped materials in hybrid storage and hardware-level cryptographic applications.

Original languageEnglish
Article number111225
JournalNano Energy
Volume142
DOIs
Publication statusPublished - Sept 2025
Externally publishedYes

Keywords

  • Flexible memristors
  • Forming free
  • Low voltage
  • Ti₃C₂ MXene
  • True random number generators

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