TY - JOUR
T1 - Low-voltage forming-free flexible memristors with multifunctionality for hybrid storage and cryptographic random number generation in edge devices
AU - Wang, Xiangke
AU - Wang, Hao
AU - Yang, Dongliang
AU - Lin, Yinan
AU - Bie, Ruitong
AU - Xu, Renjing
AU - Sun, Linfeng
N1 - Publisher Copyright:
© 2025 Elsevier Ltd
PY - 2025/9
Y1 - 2025/9
N2 - With the rapid development of edge computing and Internet of Things (IoT) technologies, achieving efficient data processing and secure encryption in resource-constrained environments has become an urgent challenge. Traditional edge devices typically rely on separate modules for data storage and encryption, which increases hardware complexity and power consumption while limiting system integration. An ideal true random number generator (TRNG) for edge scenarios should offer high entropy, low power consumption, and minimal hardware overhead. In this work, we propose a low-voltage, forming-free, multifunctional flexible memristor based on a Ti₃C₂ MXene-doped polyethyleneimine (PEI) composite. By precisely tuning the doping concentration, the device enables dual functionalities of non-volatile memory and TRNG within a single architecture. The incorporation of Ti₃C₂ MXene effectively modulates the local electric field and ion migration pathways, which stabilizes the formation and uniformity of conductive filaments and induces statistically distributed switching delays under identical voltage stimuli. These delay characteristics serve as a high-entropy physical source for true random number generation. Compared to undoped devices, the MXene-doped memristor exhibits improved switching uniformity, lower operating voltage, enhanced endurance, and greater stochasticity in delay distributions. The device achieves both stable memory performance and high-quality TRNG functionality without additional circuitry. Owing to its low power consumption, mechanical flexibility, and integrated dual-mode operation, the proposed device shows strong promise for next-generation edge computing systems with strict demands on security and energy efficiency. This study offers new insight into polymer-based memristor design and highlights the potential of MXene-doped materials in hybrid storage and hardware-level cryptographic applications.
AB - With the rapid development of edge computing and Internet of Things (IoT) technologies, achieving efficient data processing and secure encryption in resource-constrained environments has become an urgent challenge. Traditional edge devices typically rely on separate modules for data storage and encryption, which increases hardware complexity and power consumption while limiting system integration. An ideal true random number generator (TRNG) for edge scenarios should offer high entropy, low power consumption, and minimal hardware overhead. In this work, we propose a low-voltage, forming-free, multifunctional flexible memristor based on a Ti₃C₂ MXene-doped polyethyleneimine (PEI) composite. By precisely tuning the doping concentration, the device enables dual functionalities of non-volatile memory and TRNG within a single architecture. The incorporation of Ti₃C₂ MXene effectively modulates the local electric field and ion migration pathways, which stabilizes the formation and uniformity of conductive filaments and induces statistically distributed switching delays under identical voltage stimuli. These delay characteristics serve as a high-entropy physical source for true random number generation. Compared to undoped devices, the MXene-doped memristor exhibits improved switching uniformity, lower operating voltage, enhanced endurance, and greater stochasticity in delay distributions. The device achieves both stable memory performance and high-quality TRNG functionality without additional circuitry. Owing to its low power consumption, mechanical flexibility, and integrated dual-mode operation, the proposed device shows strong promise for next-generation edge computing systems with strict demands on security and energy efficiency. This study offers new insight into polymer-based memristor design and highlights the potential of MXene-doped materials in hybrid storage and hardware-level cryptographic applications.
KW - Flexible memristors
KW - Forming free
KW - Low voltage
KW - Ti₃C₂ MXene
KW - True random number generators
UR - http://www.scopus.com/inward/record.url?scp=105007662877&partnerID=8YFLogxK
U2 - 10.1016/j.nanoen.2025.111225
DO - 10.1016/j.nanoen.2025.111225
M3 - Article
AN - SCOPUS:105007662877
SN - 2211-2855
VL - 142
JO - Nano Energy
JF - Nano Energy
M1 - 111225
ER -