Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

Lin Li; Jing Zhao; Zhaosheng Hu; Baogang Quan; Junjie Li; Changzhi Gu

doi:10.1063/1.4876130

Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

Lin Li, Jing Zhao, Zhaosheng Hu, Baogang Quan, Junjie Li, Changzhi Gu

Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity.

Original language	English
Article number	182602
Journal	Applied Physics Letters
Volume	104
Issue number	18
DOIs	https://doi.org/10.1063/1.4876130
Publication status	Published - 5 May 2014
Externally published	Yes

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title = "Low-temperature electrical transport in B-doped ultrananocrystalline diamond film",

abstract = "B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity.",

author = "Lin Li and Jing Zhao and Zhaosheng Hu and Baogang Quan and Junjie Li and Changzhi Gu",

year = "2014",

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doi = "10.1063/1.4876130",

language = "English",

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TY - JOUR

T1 - Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

AU - Li, Lin

AU - Zhao, Jing

AU - Hu, Zhaosheng

AU - Quan, Baogang

AU - Li, Junjie

AU - Gu, Changzhi

PY - 2014/5/5

Y1 - 2014/5/5

N2 - B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity.

AB - B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity.

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U2 - 10.1063/1.4876130

DO - 10.1063/1.4876130

M3 - Article

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SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

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ER -

Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

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