Abstract
Developing low-infrared-emissivity materials with excellent high-temperature properties remains a significant challenge for infrared stealth of hot-end components in the 3−5 µm waveband. To meet this challenge, Yb was selected as the dopant, and a series of Ce1−xYbxO2 (x = 0.1, 0.2, 0.3) solid solutions were prepared by the solid-state reaction sintering method. The effects of varying Yb doping contents on the emissivity of CeO2 were systematically investigated. When the Yb dopant concentration is 20% (x = 0.2), Ce0.8Yb0.2O2 shows the lowest infrared emissivity (0.21 at 400°C), attributed to its highest oxygen vacancy concentration and electrical conductivity. In addition, Ce0.8Yb0.2O2 exhibits a thermal conductivity of 1.64 W·m−1·K−1 at 1473 K and a thermal expansion coefficient of 13.22 × 10−6 K−1, matching that of nickel-based superalloys. These results demonstrate that Ce0.8Yb0.2O2 has the potential to be applied as a low-infrared-emissivity coating material in high-temperature environments.
| Original language | English |
|---|---|
| Article number | e71008 |
| Journal | Journal of the American Ceramic Society |
| Volume | 109 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 2026 |
Keywords
- doped CeO
- infrared emissivity
- oxygen vacancy
- thermophysical properties
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