TY - JOUR
T1 - Longitudinal-torsional compound ultrasonic vibration end grinding sapphire
T2 - A study on surface topography and roughness
AU - Xu, Hailong
AU - Yin, Zhen
AU - Miao, Qing
AU - Dai, Chenwei
AU - Cheng, Jingcai
AU - Li, Hua
AU - Liang, Zhiqiang
AU - Li, Zhanjie
N1 - Publisher Copyright:
© 2023 Elsevier Ltd
PY - 2024/3/1
Y1 - 2024/3/1
N2 - Owing to excellent physical and optical characteristics, Sapphire has wide applications in detection, military, photoelectric and other industries. Nevertheless, it's difficult to use the conventional processing methods to process sapphire with high precision and efficiency due to its hardness and brittleness. This study adopted longitudinal-torsional compound ultrasonic vibration end grinding (LTUEG) method to grind sapphire. Firstly, the grinding trajectory equation of single grain under LTUEG was established. Then, combining with the motion state of single grain, the removal mechanism of sapphire under LTUEG was clarified. Finally, a comparative experiment between LTUEG and conventional end grinding (CEG) of sapphire was conducted, and the effects of processing parameters on surface topography and surface roughness were investigated. Results showed that surface roughness declined with grinding speed, enhanced with feed rate and grinding depth, declined first and then went up with amplitude, and the minimum value was 0.522 μm. Compared with CEG, LTUEG could significantly reduce the surface roughness, with a maximum reduction of 20.98 %. LTUEG could reduce the pits size. Meanwhile, when the longitudinal amplitude AL was 0.8 μm, the average pits length and pits depth reached the minimum, which were 33.13 μm and 5.296 μm, respectively. The research found that LTUEG could reduce block spalling, increase the ratio of plastic domain removal as well as improve the surface flatness of workpiece.
AB - Owing to excellent physical and optical characteristics, Sapphire has wide applications in detection, military, photoelectric and other industries. Nevertheless, it's difficult to use the conventional processing methods to process sapphire with high precision and efficiency due to its hardness and brittleness. This study adopted longitudinal-torsional compound ultrasonic vibration end grinding (LTUEG) method to grind sapphire. Firstly, the grinding trajectory equation of single grain under LTUEG was established. Then, combining with the motion state of single grain, the removal mechanism of sapphire under LTUEG was clarified. Finally, a comparative experiment between LTUEG and conventional end grinding (CEG) of sapphire was conducted, and the effects of processing parameters on surface topography and surface roughness were investigated. Results showed that surface roughness declined with grinding speed, enhanced with feed rate and grinding depth, declined first and then went up with amplitude, and the minimum value was 0.522 μm. Compared with CEG, LTUEG could significantly reduce the surface roughness, with a maximum reduction of 20.98 %. LTUEG could reduce the pits size. Meanwhile, when the longitudinal amplitude AL was 0.8 μm, the average pits length and pits depth reached the minimum, which were 33.13 μm and 5.296 μm, respectively. The research found that LTUEG could reduce block spalling, increase the ratio of plastic domain removal as well as improve the surface flatness of workpiece.
KW - End grinding
KW - Longitudinal-torsional compound ultrasonic vibration
KW - Sapphire
KW - Surface roughness
KW - Surface topography
UR - http://www.scopus.com/inward/record.url?scp=85178373864&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2023.107990
DO - 10.1016/j.mssp.2023.107990
M3 - Article
AN - SCOPUS:85178373864
SN - 1369-8001
VL - 171
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 107990
ER -