Large-signal modulation characteristics of a GaN-based micro-LED for Gbps visible-light communication

Pengfei Tian; Zhengyuan Wu; Xiaoyan Liu; Zhilai Fang; Shuailong Zhang; Xiaolin Zhou; Kefu Liu; Ming Gang Liu; Shu Jhih Chen; Chia Yu Lee; Chunxiao Cong; Laigui Hu; Zhi Jun Qiu; Lirong Zheng; Ran Liu

doi:10.7567/APEX.11.044101

Large-signal modulation characteristics of a GaN-based micro-LED for Gbps visible-light communication

Pengfei Tian
, Zhengyuan Wu
, Xiaoyan Liu
, Zhilai Fang
, Shuailong Zhang
, Xiaolin Zhou
, Kefu Liu
, Ming Gang Liu
, Shu Jhih Chen
, Chia Yu Lee
, Chunxiao Cong
, Laigui Hu
, Zhi Jun Qiu
, Lirong Zheng
, Ran Liu

Fudan University
University of Toronto
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect
Ltd.

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The large-signal modulation characteristics of a GaN-based micro-LED have been studied for Gbps visible-light communication. With an increasing signal modulation depth the modulation bandwidth decreases, which matches up with the increase in the sum of the signal rise time and fall time. By simulating the band diagram and the carrier recombination rate of the micro-LED under large-signal modulation, carrier recombination and the carrier sweep-out effect are analyzed and found to be the dominant mechanisms behind the variation of modulation bandwidth. These results give further insight into improving the modulation bandwidth for high-speed visible-light communication.

Original language	English
Article number	044101
Journal	Applied Physics Express
Volume	11
Issue number	4
DOIs	https://doi.org/10.7567/APEX.11.044101
Publication status	Published - Apr 2018
Externally published	Yes

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title = "Large-signal modulation characteristics of a GaN-based micro-LED for Gbps visible-light communication",

abstract = "The large-signal modulation characteristics of a GaN-based micro-LED have been studied for Gbps visible-light communication. With an increasing signal modulation depth the modulation bandwidth decreases, which matches up with the increase in the sum of the signal rise time and fall time. By simulating the band diagram and the carrier recombination rate of the micro-LED under large-signal modulation, carrier recombination and the carrier sweep-out effect are analyzed and found to be the dominant mechanisms behind the variation of modulation bandwidth. These results give further insight into improving the modulation bandwidth for high-speed visible-light communication.",

author = "Pengfei Tian and Zhengyuan Wu and Xiaoyan Liu and Zhilai Fang and Shuailong Zhang and Xiaolin Zhou and Kefu Liu and Liu, \{Ming Gang\} and Chen, \{Shu Jhih\} and Lee, \{Chia Yu\} and Chunxiao Cong and Laigui Hu and Qiu, \{Zhi Jun\} and Lirong Zheng and Ran Liu",

note = "Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",

year = "2018",

month = apr,

doi = "10.7567/APEX.11.044101",

language = "English",

volume = "11",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Large-signal modulation characteristics of a GaN-based micro-LED for Gbps visible-light communication

AU - Tian, Pengfei

AU - Wu, Zhengyuan

AU - Liu, Xiaoyan

AU - Fang, Zhilai

AU - Zhang, Shuailong

AU - Zhou, Xiaolin

AU - Liu, Kefu

AU - Liu, Ming Gang

AU - Chen, Shu Jhih

AU - Lee, Chia Yu

AU - Cong, Chunxiao

AU - Hu, Laigui

AU - Qiu, Zhi Jun

AU - Zheng, Lirong

AU - Liu, Ran

PY - 2018/4

Y1 - 2018/4

N2 - The large-signal modulation characteristics of a GaN-based micro-LED have been studied for Gbps visible-light communication. With an increasing signal modulation depth the modulation bandwidth decreases, which matches up with the increase in the sum of the signal rise time and fall time. By simulating the band diagram and the carrier recombination rate of the micro-LED under large-signal modulation, carrier recombination and the carrier sweep-out effect are analyzed and found to be the dominant mechanisms behind the variation of modulation bandwidth. These results give further insight into improving the modulation bandwidth for high-speed visible-light communication.

AB - The large-signal modulation characteristics of a GaN-based micro-LED have been studied for Gbps visible-light communication. With an increasing signal modulation depth the modulation bandwidth decreases, which matches up with the increase in the sum of the signal rise time and fall time. By simulating the band diagram and the carrier recombination rate of the micro-LED under large-signal modulation, carrier recombination and the carrier sweep-out effect are analyzed and found to be the dominant mechanisms behind the variation of modulation bandwidth. These results give further insight into improving the modulation bandwidth for high-speed visible-light communication.

UR - https://www.scopus.com/pages/publications/85044955350

U2 - 10.7567/APEX.11.044101

DO - 10.7567/APEX.11.044101

M3 - Article

AN - SCOPUS:85044955350

SN - 1882-0778

VL - 11

JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

M1 - 044101

ER -

Large-signal modulation characteristics of a GaN-based micro-LED for Gbps visible-light communication

Abstract

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