Large-Signal Circuit Model for Datacom VCSELs

Alexander Grabowski; Johan Gustavsson; Zhongxia Simon He; Anders Larsson

doi:10.1109/ISLC.2018.8516232

Large-Signal Circuit Model for Datacom VCSELs

Alexander Grabowski
, Johan Gustavsson
, Zhongxia Simon He
, Anders Larsson

Chalmers University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We present a physics-based equivalent-circuit model for datacom VCSELs, with ambient temperature and self-heating effects accounted for. This circuit model is unique in accounting for carrier capture dynamics between active region continuum and quantum well bound states. OOK/PAM4 simulations are demonstrated at 25°C and 85°C.

Original language	English
Title of host publication	26th International Semiconductor Laser Conference, ISLC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	193-194
Number of pages	2
ISBN (Electronic)	9781538664865
DOIs	https://doi.org/10.1109/ISLC.2018.8516232
Publication status	Published - 30 Oct 2018
Externally published	Yes
Event	26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States Duration: 16 Sept 2018 → 19 Sept 2018

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	2018-September
ISSN (Print)	0899-9406

Conference

Conference	26th International Semiconductor Laser Conference, ISLC 2018
Country/Territory	United States
City	Santa Fe
Period	16/09/18 → 19/09/18

Access to Document

10.1109/ISLC.2018.8516232

Cite this

Grabowski, A., Gustavsson, J., He, Z. S., & Larsson, A. (2018). Large-Signal Circuit Model for Datacom VCSELs. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 193-194). Article 8516232 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516232

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title = "Large-Signal Circuit Model for Datacom VCSELs",

abstract = "We present a physics-based equivalent-circuit model for datacom VCSELs, with ambient temperature and self-heating effects accounted for. This circuit model is unique in accounting for carrier capture dynamics between active region continuum and quantum well bound states. OOK/PAM4 simulations are demonstrated at 25°C and 85°C.",

author = "Alexander Grabowski and Johan Gustavsson and He, \{Zhongxia Simon\} and Anders Larsson",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 26th International Semiconductor Laser Conference, ISLC 2018 ; Conference date: 16-09-2018 Through 19-09-2018",

year = "2018",

month = oct,

day = "30",

doi = "10.1109/ISLC.2018.8516232",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "193--194",

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}

Grabowski, A, Gustavsson, J, He, ZS & Larsson, A 2018, Large-Signal Circuit Model for Datacom VCSELs. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516232, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 193-194, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 16/09/18. https://doi.org/10.1109/ISLC.2018.8516232

Large-Signal Circuit Model for Datacom VCSELs. / Grabowski, Alexander; Gustavsson, Johan; He, Zhongxia Simon et al.
26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 193-194 8516232 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Large-Signal Circuit Model for Datacom VCSELs

AU - Grabowski, Alexander

AU - Gustavsson, Johan

AU - He, Zhongxia Simon

AU - Larsson, Anders

PY - 2018/10/30

Y1 - 2018/10/30

N2 - We present a physics-based equivalent-circuit model for datacom VCSELs, with ambient temperature and self-heating effects accounted for. This circuit model is unique in accounting for carrier capture dynamics between active region continuum and quantum well bound states. OOK/PAM4 simulations are demonstrated at 25°C and 85°C.

AB - We present a physics-based equivalent-circuit model for datacom VCSELs, with ambient temperature and self-heating effects accounted for. This circuit model is unique in accounting for carrier capture dynamics between active region continuum and quantum well bound states. OOK/PAM4 simulations are demonstrated at 25°C and 85°C.

UR - https://www.scopus.com/pages/publications/85057391086

U2 - 10.1109/ISLC.2018.8516232

DO - 10.1109/ISLC.2018.8516232

M3 - Conference contribution

AN - SCOPUS:85057391086

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 193

EP - 194

BT - 26th International Semiconductor Laser Conference, ISLC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th International Semiconductor Laser Conference, ISLC 2018

Y2 - 16 September 2018 through 19 September 2018

ER -

Large-Signal Circuit Model for Datacom VCSELs

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