Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

Han Chun Wu; Alexander N. Chaika; Ming Chien Hsu; Tsung Wei Huang; Mourad Abid; Mohamed Abid; Victor Yu Aristov; Olga V. Molodtsova; Sergey V. Babenkov; Yuran Niu; Barry E. Murphy; Sergey A. Krasnikov; Olaf Lübben; Huajun Liu; Byong Sun Chun; Yahya T. Janabi; Sergei N. Molotkov; Igor V. Shvets; Alexander I. Lichtenstein; Mikhail I. Katsnelson; Ching Ray Chang

doi:10.1038/ncomms14453

Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

Han Chun Wu^*
, Alexander N. Chaika
, Ming Chien Hsu
, Tsung Wei Huang
, Mourad Abid
, Mohamed Abid
, Victor Yu Aristov
, Olga V. Molodtsova
, Sergey V. Babenkov
, Yuran Niu
, Barry E. Murphy
, Sergey A. Krasnikov
, Olaf Lübben
, Huajun Liu
, Byong Sun Chun
, Yahya T. Janabi
, Sergei N. Molotkov
, Igor V. Shvets
, Alexander I. Lichtenstein
, Mikhail I. Katsnelson

Ching Ray Chang

^*Corresponding author for this work

Beijing Institute of Technology
Trinity College Dublin
RAS - Institute of Solid State Physics
National Taiwan University
German Electron Synchrotron
Freiberg University of Mining and Technology
St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
Lund University
CAS - Institute of Plasma Physics
Korea Research Institute of Standards and Science
Saudi Arabian Oil Company
University of Hamburg
Ural Federal University
Radboud University Nijmegen

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.

Original language	English
Article number	14453
Journal	Nature Communications
Volume	8
DOIs	https://doi.org/10.1038/ncomms14453
Publication status	Published - 15 Feb 2017
Externally published	Yes

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Wu, H. C., Chaika, A. N., Hsu, M. C., Huang, T. W., Abid, M., Abid, M., Aristov, V. Y., Molodtsova, O. V., Babenkov, S. V., Niu, Y., Murphy, B. E., Krasnikov, S. A., Lübben, O., Liu, H., Chun, B. S., Janabi, Y. T., Molotkov, S. N., Shvets, I. V., Lichtenstein, A. I., ... Chang, C. R. (2017). Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene. Nature Communications, 8, Article 14453. https://doi.org/10.1038/ncomms14453

@article{0bde75ec42fc4c3caf117f4e3841c604,

title = "Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene",

abstract = "Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.",

author = "Wu, \{Han Chun\} and Chaika, \{Alexander N.\} and Hsu, \{Ming Chien\} and Huang, \{Tsung Wei\} and Mourad Abid and Mohamed Abid and Aristov, \{Victor Yu\} and Molodtsova, \{Olga V.\} and Babenkov, \{Sergey V.\} and Yuran Niu and Murphy, \{Barry E.\} and Krasnikov, \{Sergey A.\} and Olaf L{\"u}bben and Huajun Liu and Chun, \{Byong Sun\} and Janabi, \{Yahya T.\} and Molotkov, \{Sergei N.\} and Shvets, \{Igor V.\} and Lichtenstein, \{Alexander I.\} and Katsnelson, \{Mikhail I.\} and Chang, \{Ching Ray\}",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2017.",

year = "2017",

month = feb,

day = "15",

doi = "10.1038/ncomms14453",

language = "English",

volume = "8",

journal = "Nature Communications",

issn = "2041-1723",

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}

Wu, HC, Chaika, AN, Hsu, MC, Huang, TW, Abid, M, Abid, M, Aristov, VY, Molodtsova, OV, Babenkov, SV, Niu, Y, Murphy, BE, Krasnikov, SA, Lübben, O, Liu, H, Chun, BS, Janabi, YT, Molotkov, SN, Shvets, IV, Lichtenstein, AI, Katsnelson, MI & Chang, CR 2017, 'Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene', Nature Communications, vol. 8, 14453. https://doi.org/10.1038/ncomms14453

TY - JOUR

T1 - Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

AU - Wu, Han Chun

AU - Chaika, Alexander N.

AU - Hsu, Ming Chien

AU - Huang, Tsung Wei

AU - Abid, Mourad

AU - Abid, Mohamed

AU - Aristov, Victor Yu

AU - Molodtsova, Olga V.

AU - Babenkov, Sergey V.

AU - Niu, Yuran

AU - Murphy, Barry E.

AU - Krasnikov, Sergey A.

AU - Lübben, Olaf

AU - Liu, Huajun

AU - Chun, Byong Sun

AU - Janabi, Yahya T.

AU - Molotkov, Sergei N.

AU - Shvets, Igor V.

AU - Lichtenstein, Alexander I.

AU - Katsnelson, Mikhail I.

AU - Chang, Ching Ray

PY - 2017/2/15

Y1 - 2017/2/15

N2 - Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.

AB - Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.

UR - https://www.scopus.com/pages/publications/85012928733

U2 - 10.1038/ncomms14453

DO - 10.1038/ncomms14453

M3 - Article

C2 - 28198379

AN - SCOPUS:85012928733

SN - 2041-1723

VL - 8

JO - Nature Communications

JF - Nature Communications

M1 - 14453

ER -

Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

Abstract

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