Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Zhi Min Liao; Han Chun Wu; Shishir Kumar; Georg S. Duesberg; Yang Bo Zhou; Graham L.W. Cross; Igor V. Shvets; Da Peng Yu

doi:10.1002/adma.201104796

Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Zhi Min Liao^*, Han Chun Wu, Shishir Kumar, Georg S. Duesberg, Yang Bo Zhou, Graham L.W. Cross, Igor V. Shvets, Da Peng Yu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.

Original language	English
Pages (from-to)	1862-1866
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	14
DOIs	https://doi.org/10.1002/adma.201104796
Publication status	Published - 10 Apr 2012
Externally published	Yes

Keywords

anisotropic MR
magnetoresistance
multilayer graphene
temperature dependence
weak antilocalization

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10.1002/adma.201104796

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abstract = "A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.",

keywords = "anisotropic MR, magnetoresistance, multilayer graphene, temperature dependence, weak antilocalization",

author = "Liao, {Zhi Min} and Wu, {Han Chun} and Shishir Kumar and Duesberg, {Georg S.} and Zhou, {Yang Bo} and Cross, {Graham L.W.} and Shvets, {Igor V.} and Yu, {Da Peng}",

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AU - Liao, Zhi Min

AU - Wu, Han Chun

AU - Kumar, Shishir

AU - Duesberg, Georg S.

AU - Zhou, Yang Bo

AU - Cross, Graham L.W.

AU - Shvets, Igor V.

AU - Yu, Da Peng

PY - 2012/4/10

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AB - A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.

KW - anisotropic MR

KW - magnetoresistance

KW - multilayer graphene

KW - temperature dependence

KW - weak antilocalization

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ER -

Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

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Keywords

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