Large bandgap of pressurized trilayer graphene

Feng Ke; Yabin Chen; Ketao Yin; Jiejuan Yan; Hengzhong Zhang; Zhenxian Liu; John S. Tse; Junqiao Wu; Ho kwang Mao; Bin Chen

doi:10.1073/pnas.1820890116

Large bandgap of pressurized trilayer graphene

Feng Ke, Yabin Chen, Ketao Yin, Jiejuan Yan, Hengzhong Zhang, Zhenxian Liu, John S. Tse, Junqiao Wu, Ho kwang Mao^*, Bin Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graphene, but this value is still far below the threshold for practical applications. Through in situ electrical measurements, we observed a semiconducting character in compressed trilayer graphene by tuning the interlayer interaction with pressure. The optical absorption measurements demonstrate that an intrinsic bandgap of 2.5 ± 0.3 eV could be achieved in such a semiconducting state, and once opened could be preserved to a few GPa. The realization of wide bandgap in compressed trilayer graphene offers opportunities in carbon-based electronic devices.

Original language	English
Pages (from-to)	9186-9190
Number of pages	5
Journal	Proceedings of the National Academy of Sciences of the United States of America
Volume	116
Issue number	19
DOIs	https://doi.org/10.1073/pnas.1820890116
Publication status	Published - 7 May 2019
Externally published	Yes

Keywords

Bandgap opening
Electrical
Graphene
High pressure
Transport
Two-dimensional materials

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10.1073/pnas.1820890116

Cite this

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abstract = "Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graphene, but this value is still far below the threshold for practical applications. Through in situ electrical measurements, we observed a semiconducting character in compressed trilayer graphene by tuning the interlayer interaction with pressure. The optical absorption measurements demonstrate that an intrinsic bandgap of 2.5 ± 0.3 eV could be achieved in such a semiconducting state, and once opened could be preserved to a few GPa. The realization of wide bandgap in compressed trilayer graphene offers opportunities in carbon-based electronic devices.",

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AU - Yin, Ketao

AU - Yan, Jiejuan

AU - Zhang, Hengzhong

AU - Liu, Zhenxian

AU - Tse, John S.

AU - Wu, Junqiao

AU - Mao, Ho kwang

AU - Chen, Bin

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Large bandgap of pressurized trilayer graphene

Abstract

Keywords

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