KMC-based POM flash cell optimization and time-dependent performance investigation

Jie Ding; Dejiang Mu; Oves Badami; Cristina Medina-Bailon; Xiaomin Chang; Daniel Nagy; Paul Lapham; Vihar Georgiev; Asen Asenov

doi:10.1088/1361-6641/ac008b

KMC-based POM flash cell optimization and time-dependent performance investigation

Jie Ding^*
, Dejiang Mu
, Oves Badami
, Cristina Medina-Bailon
, Xiaomin Chang
, Daniel Nagy
, Paul Lapham
, Vihar Georgiev
, Asen Asenov

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The beneficial characteristics of polyoxometalate (POM) molecule-based flash memory cells provide interesting opportunities for scaling beyond the limitations of conventional flash cells. In this paper, we study the write, erase, and retention times of POM flash cells using a kinetic Monte Carlo method implemented in the multi-scale Nano-Electronic Simulation Software simulation framework. The POM flash structure is optimized by studying the tradeoffs between program/erase time and retention time. Based on the optimized POM flash structure, the POM molecular layer charging and discharging processes as well as the corresponding threshold voltage variation are analyzed. The distributions of write, erase, and retention times are simulated and analyzed when studying the POM flash dynamic charging and discharging characteristics.

Original language	English
Article number	075021
Journal	Semiconductor Science and Technology
Volume	36
Issue number	7
DOIs	https://doi.org/10.1088/1361-6641/ac008b
Publication status	Published - Jul 2021
Externally published	Yes

Keywords

charging
discharging
flash memory
kinetic Monte Carlo (KMC)
polyoxometalates (POMs)

Access to Document

10.1088/1361-6641/ac008b

Cite this

@article{9fb6bfc470874ce0b346fd344e71fad0,

title = "KMC-based POM flash cell optimization and time-dependent performance investigation",

abstract = "The beneficial characteristics of polyoxometalate (POM) molecule-based flash memory cells provide interesting opportunities for scaling beyond the limitations of conventional flash cells. In this paper, we study the write, erase, and retention times of POM flash cells using a kinetic Monte Carlo method implemented in the multi-scale Nano-Electronic Simulation Software simulation framework. The POM flash structure is optimized by studying the tradeoffs between program/erase time and retention time. Based on the optimized POM flash structure, the POM molecular layer charging and discharging processes as well as the corresponding threshold voltage variation are analyzed. The distributions of write, erase, and retention times are simulated and analyzed when studying the POM flash dynamic charging and discharging characteristics.",

keywords = "charging, discharging, flash memory, kinetic Monte Carlo (KMC), polyoxometalates (POMs)",

author = "Jie Ding and Dejiang Mu and Oves Badami and Cristina Medina-Bailon and Xiaomin Chang and Daniel Nagy and Paul Lapham and Vihar Georgiev and Asen Asenov",

note = "Publisher Copyright: {\textcopyright} 2021 IOP Publishing Ltd.",

year = "2021",

month = jul,

doi = "10.1088/1361-6641/ac008b",

language = "English",

volume = "36",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "7",

}

TY - JOUR

T1 - KMC-based POM flash cell optimization and time-dependent performance investigation

AU - Ding, Jie

AU - Mu, Dejiang

AU - Badami, Oves

AU - Medina-Bailon, Cristina

AU - Chang, Xiaomin

AU - Nagy, Daniel

AU - Lapham, Paul

AU - Georgiev, Vihar

AU - Asenov, Asen

PY - 2021/7

Y1 - 2021/7

N2 - The beneficial characteristics of polyoxometalate (POM) molecule-based flash memory cells provide interesting opportunities for scaling beyond the limitations of conventional flash cells. In this paper, we study the write, erase, and retention times of POM flash cells using a kinetic Monte Carlo method implemented in the multi-scale Nano-Electronic Simulation Software simulation framework. The POM flash structure is optimized by studying the tradeoffs between program/erase time and retention time. Based on the optimized POM flash structure, the POM molecular layer charging and discharging processes as well as the corresponding threshold voltage variation are analyzed. The distributions of write, erase, and retention times are simulated and analyzed when studying the POM flash dynamic charging and discharging characteristics.

AB - The beneficial characteristics of polyoxometalate (POM) molecule-based flash memory cells provide interesting opportunities for scaling beyond the limitations of conventional flash cells. In this paper, we study the write, erase, and retention times of POM flash cells using a kinetic Monte Carlo method implemented in the multi-scale Nano-Electronic Simulation Software simulation framework. The POM flash structure is optimized by studying the tradeoffs between program/erase time and retention time. Based on the optimized POM flash structure, the POM molecular layer charging and discharging processes as well as the corresponding threshold voltage variation are analyzed. The distributions of write, erase, and retention times are simulated and analyzed when studying the POM flash dynamic charging and discharging characteristics.

KW - charging

KW - discharging

KW - flash memory

KW - kinetic Monte Carlo (KMC)

KW - polyoxometalates (POMs)

UR - https://www.scopus.com/pages/publications/85109087861

U2 - 10.1088/1361-6641/ac008b

DO - 10.1088/1361-6641/ac008b

M3 - Article

AN - SCOPUS:85109087861

SN - 0268-1242

VL - 36

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

M1 - 075021

ER -

KMC-based POM flash cell optimization and time-dependent performance investigation

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this