@inproceedings{ecb4997f9b0341f9ab38fe7dd648ffb0,
title = "Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications",
abstract = "GeSn alloys are investigated for high-performance tunneling device applications. Samples with relatively high Sn compositions are characterized. GeSn electronic band structures are calculated and basic material parameters are extracted. Based on the established GeSn parameter sets, direct-gap GeSn tunneling field-effect transistors are simulated and analyzed. A higher Sn composition enhances device performance, but subthreshold swing is affected by the increased leakage level. For ultra small supply voltages, device structure should be optimized to improve device characteristics.",
keywords = "GeSn alloys, tunneling FETs and electronic band structures",
author = "Lei Liu and Renrong Liang and Guilei Wang and Radamson, \{Henry H.\} and Jing Wang and Jun Xu",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 ; Conference date: 28-02-2017 Through 02-03-2017",
year = "2017",
month = jun,
day = "13",
doi = "10.1109/EDTM.2017.7947591",
language = "English",
series = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "180--181",
booktitle = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",
address = "United States",
}