Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer

C. Fowley; B. S. Chun; H. C. Wu; M. Abid; J. U. Cho; S. J. Noh; Y. K. Kim; I. V. Shvets; J. M.D. Coey

doi:10.1063/1.3266522

Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer

C. Fowley^*
, B. S. Chun
, H. C. Wu
, M. Abid
, J. U. Cho
, S. J. Noh
, Y. K. Kim
, I. V. Shvets
, J. M.D. Coey

^*Corresponding author for this work

Trinity College Dublin
Korea University

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report an oscillation of the giant magnetoresistance (GMR) ratio as a function of Ru layer thickness in the CoFe/Cu/[CoFe/Ru/CoFe]SAF/Cu/CoFe/IrMn dual spin valve (SV) structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling (IEC). The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as well as the electrical separation of the overall structure into two SVs connected in parallel.

Original language	English
Article number	222506
Journal	Applied Physics Letters
Volume	95
Issue number	22
DOIs	https://doi.org/10.1063/1.3266522
Publication status	Published - 2009
Externally published	Yes

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10.1063/1.3266522

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title = "Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer",

abstract = "We report an oscillation of the giant magnetoresistance (GMR) ratio as a function of Ru layer thickness in the CoFe/Cu/[CoFe/Ru/CoFe]SAF/Cu/CoFe/IrMn dual spin valve (SV) structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling (IEC). The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as well as the electrical separation of the overall structure into two SVs connected in parallel.",

author = "C. Fowley and Chun, \{B. S.\} and Wu, \{H. C.\} and M. Abid and Cho, \{J. U.\} and Noh, \{S. J.\} and Kim, \{Y. K.\} and Shvets, \{I. V.\} and Coey, \{J. M.D.\}",

year = "2009",

doi = "10.1063/1.3266522",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer

AU - Fowley, C.

AU - Chun, B. S.

AU - Wu, H. C.

AU - Abid, M.

AU - Cho, J. U.

AU - Noh, S. J.

AU - Kim, Y. K.

AU - Shvets, I. V.

AU - Coey, J. M.D.

PY - 2009

Y1 - 2009

N2 - We report an oscillation of the giant magnetoresistance (GMR) ratio as a function of Ru layer thickness in the CoFe/Cu/[CoFe/Ru/CoFe]SAF/Cu/CoFe/IrMn dual spin valve (SV) structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling (IEC). The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as well as the electrical separation of the overall structure into two SVs connected in parallel.

AB - We report an oscillation of the giant magnetoresistance (GMR) ratio as a function of Ru layer thickness in the CoFe/Cu/[CoFe/Ru/CoFe]SAF/Cu/CoFe/IrMn dual spin valve (SV) structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling (IEC). The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as well as the electrical separation of the overall structure into two SVs connected in parallel.

UR - https://www.scopus.com/pages/publications/71949086998

U2 - 10.1063/1.3266522

DO - 10.1063/1.3266522

M3 - Article

AN - SCOPUS:71949086998

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222506

ER -

Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer

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