Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

Qimin Yan; Bing Huang; Jie Yu; Fawei Zheng; Ji Zang; Jian Wu; Bing Lin Gu; Feng Liu; Wenhui Duan

doi:10.1021/nl070133j

Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

Qimin Yan
, Bing Huang
, Jie Yu
, Fawei Zheng
, Ji Zang
, Jian Wu
, Bing Lin Gu
, Feng Liu^*
, Wenhui Duan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

562 Citations (Scopus)

Abstract

We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 ³-10 ⁴, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 ³ Sm ^-1.

Original language	English
Pages (from-to)	1469-1473
Number of pages	5
Journal	Nano Letters
Volume	7
Issue number	6
DOIs	https://doi.org/10.1021/nl070133j
Publication status	Published - Jun 2007
Externally published	Yes

Access to Document

10.1021/nl070133j

Cite this

@article{89bb5cbac9424ef699c47c534298c5ca,

title = "Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping",

abstract = "We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 3-10 4, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 3 Sm -1.",

author = "Qimin Yan and Bing Huang and Jie Yu and Fawei Zheng and Ji Zang and Jian Wu and Gu, \{Bing Lin\} and Feng Liu and Wenhui Duan",

year = "2007",

month = jun,

doi = "10.1021/nl070133j",

language = "English",

volume = "7",

pages = "1469--1473",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "6",

}

TY - JOUR

T1 - Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

AU - Yan, Qimin

AU - Huang, Bing

AU - Yu, Jie

AU - Zheng, Fawei

AU - Zang, Ji

AU - Wu, Jian

AU - Gu, Bing Lin

AU - Liu, Feng

AU - Duan, Wenhui

PY - 2007/6

Y1 - 2007/6

N2 - We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 3-10 4, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 3 Sm -1.

AB - We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 3-10 4, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 3 Sm -1.

UR - https://www.scopus.com/pages/publications/34547380841

U2 - 10.1021/nl070133j

DO - 10.1021/nl070133j

M3 - Article

C2 - 17461605

AN - SCOPUS:34547380841

SN - 1530-6984

VL - 7

SP - 1469

EP - 1473

JO - Nano Letters

JF - Nano Letters

IS - 6

ER -

Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

Abstract

Access to Document

Other files and links

Fingerprint

Cite this