Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

Qimin Yan, Bing Huang, Jie Yu, Fawei Zheng, Ji Zang, Jian Wu, Bing Lin Gu, Feng Liu*, Wenhui Duan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

554 Citations (Scopus)

Abstract

We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 3-10 4, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 3 Sm -1.

Original languageEnglish
Pages (from-to)1469-1473
Number of pages5
JournalNano Letters
Volume7
Issue number6
DOIs
Publication statusPublished - Jun 2007
Externally publishedYes

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