Abstract
We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 3-10 4, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 3 Sm -1.
Original language | English |
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Pages (from-to) | 1469-1473 |
Number of pages | 5 |
Journal | Nano Letters |
Volume | 7 |
Issue number | 6 |
DOIs | |
Publication status | Published - Jun 2007 |
Externally published | Yes |