Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

Qimin Yan; Bing Huang; Jie Yu; Fawei Zheng; Ji Zang; Jian Wu; Bing Lin Gu; Feng Liu; Wenhui Duan

doi:10.1021/nl070133j

Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

Qimin Yan, Bing Huang, Jie Yu, Fawei Zheng, Ji Zang, Jian Wu, Bing Lin Gu, Feng Liu^*, Wenhui Duan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

554 Citations (Scopus)

Abstract

We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 ³-10 ⁴, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 ³ Sm ^-1.

Original language	English
Pages (from-to)	1469-1473
Number of pages	5
Journal	Nano Letters
Volume	7
Issue number	6
DOIs	https://doi.org/10.1021/nl070133j
Publication status	Published - Jun 2007
Externally published	Yes

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10.1021/nl070133j

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title = "Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping",

abstract = "We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 3-10 4, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 3 Sm -1.",

author = "Qimin Yan and Bing Huang and Jie Yu and Fawei Zheng and Ji Zang and Jian Wu and Gu, {Bing Lin} and Feng Liu and Wenhui Duan",

year = "2007",

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doi = "10.1021/nl070133j",

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T1 - Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

AU - Yan, Qimin

AU - Huang, Bing

AU - Yu, Jie

AU - Zheng, Fawei

AU - Zang, Ji

AU - Wu, Jian

AU - Gu, Bing Lin

AU - Liu, Feng

AU - Duan, Wenhui

PY - 2007/6

Y1 - 2007/6

N2 - We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 3-10 4, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 3 Sm -1.

AB - We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 3-10 4, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 3 Sm -1.

UR - http://www.scopus.com/inward/record.url?scp=34547380841&partnerID=8YFLogxK

U2 - 10.1021/nl070133j

DO - 10.1021/nl070133j

M3 - Article

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SN - 1530-6984

VL - 7

SP - 1469

EP - 1473

JO - Nano Letters

JF - Nano Letters

IS - 6

ER -

Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

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