Intracavity-doubled self-Q-switched Nd,Cr:YAG 946/473 nm microchip laser

De Hua Li; Ling Wang; Chun Qing Gao; Zhi Guo Zhang; Bao Hua Feng; Gaebler Volker; Bai Ning Liu; H. J. Eichler; Shi Wen Zhang; An Han Liu; De Zhong Shen

doi:10.1088/0256-307X/19/4/317

Intracavity-doubled self-Q-switched Nd,Cr:YAG 946/473 nm microchip laser

De Hua Li^*, Ling Wang, Chun Qing Gao, Zhi Guo Zhang, Bao Hua Feng, Gaebler Volker, Bai Ning Liu, H. J. Eichler, Shi Wen Zhang, An Han Liu, De Zhong Shen

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We carried out the operation oran intracavity frequency-doubled self-Q-switched Nd,Cr:YAG/KNbO₃ 946/473 nm microchip laser pumped by a Ti:sapphire laser. The overall cavity length was about 4 mm. The maximum average blue power or 12 mW was achieved with a repetition rate or 13 kHz at an absorbed pump power or 545 mW. The pulses of the 473nm laser had a duration or 7 ns and a peak power of 132 W at this pump level. The conversion efficiency was 2.2% with respect to the absorbed pump power of a 808 nm laser.

Original language	English
Pages (from-to)	504-506
Number of pages	3
Journal	Chinese Physics Letters
Volume	19
Issue number	4
DOIs	https://doi.org/10.1088/0256-307X/19/4/317
Publication status	Published - 2002

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title = "Intracavity-doubled self-Q-switched Nd,Cr:YAG 946/473 nm microchip laser",

abstract = "We carried out the operation oran intracavity frequency-doubled self-Q-switched Nd,Cr:YAG/KNbO3 946/473 nm microchip laser pumped by a Ti:sapphire laser. The overall cavity length was about 4 mm. The maximum average blue power or 12 mW was achieved with a repetition rate or 13 kHz at an absorbed pump power or 545 mW. The pulses of the 473nm laser had a duration or 7 ns and a peak power of 132 W at this pump level. The conversion efficiency was 2.2\% with respect to the absorbed pump power of a 808 nm laser.",

author = "Li, \{De Hua\} and Ling Wang and Gao, \{Chun Qing\} and Zhang, \{Zhi Guo\} and Feng, \{Bao Hua\} and Gaebler Volker and Liu, \{Bai Ning\} and Eichler, \{H. J.\} and Zhang, \{Shi Wen\} and Liu, \{An Han\} and Shen, \{De Zhong\}",

year = "2002",

doi = "10.1088/0256-307X/19/4/317",

language = "English",

volume = "19",

pages = "504--506",

journal = "Chinese Physics Letters",

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TY - JOUR

T1 - Intracavity-doubled self-Q-switched Nd,Cr:YAG 946/473 nm microchip laser

AU - Li, De Hua

AU - Wang, Ling

AU - Gao, Chun Qing

AU - Zhang, Zhi Guo

AU - Feng, Bao Hua

AU - Volker, Gaebler

AU - Liu, Bai Ning

AU - Eichler, H. J.

AU - Zhang, Shi Wen

AU - Liu, An Han

AU - Shen, De Zhong

PY - 2002

Y1 - 2002

N2 - We carried out the operation oran intracavity frequency-doubled self-Q-switched Nd,Cr:YAG/KNbO3 946/473 nm microchip laser pumped by a Ti:sapphire laser. The overall cavity length was about 4 mm. The maximum average blue power or 12 mW was achieved with a repetition rate or 13 kHz at an absorbed pump power or 545 mW. The pulses of the 473nm laser had a duration or 7 ns and a peak power of 132 W at this pump level. The conversion efficiency was 2.2% with respect to the absorbed pump power of a 808 nm laser.

AB - We carried out the operation oran intracavity frequency-doubled self-Q-switched Nd,Cr:YAG/KNbO3 946/473 nm microchip laser pumped by a Ti:sapphire laser. The overall cavity length was about 4 mm. The maximum average blue power or 12 mW was achieved with a repetition rate or 13 kHz at an absorbed pump power or 545 mW. The pulses of the 473nm laser had a duration or 7 ns and a peak power of 132 W at this pump level. The conversion efficiency was 2.2% with respect to the absorbed pump power of a 808 nm laser.

UR - https://www.scopus.com/pages/publications/0036011813

U2 - 10.1088/0256-307X/19/4/317

DO - 10.1088/0256-307X/19/4/317

M3 - Article

AN - SCOPUS:0036011813

SN - 0256-307X

VL - 19

SP - 504

EP - 506

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 4

ER -

Intracavity-doubled self-Q-switched Nd,Cr:YAG 946/473 nm microchip laser

Abstract

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