Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures

Kenan Zhang; Tianning Zhang; Guanghui Cheng; Tianxin Li; Shuxia Wang; Wei Wei; Xiaohao Zhou; Weiwei Yu; Yan Sun; Peng Wang; Dong Zhang; Changgan Zeng; Xingjun Wang; Weida Hu; Hong Jin Fan; Guozhen Shen; Xin Chen; Xiangfeng Duan; Kai Chang; Ning Dai

doi:10.1021/acsnano.6b00980

Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe₂/MoS₂ van der Waals Heterostructures

Kenan Zhang
, Tianning Zhang
, Guanghui Cheng
, Tianxin Li
, Shuxia Wang
, Wei Wei
, Xiaohao Zhou
, Weiwei Yu
, Yan Sun
, Peng Wang
, Dong Zhang
, Changgan Zeng
, Xingjun Wang
, Weida Hu
, Hong Jin Fan
, Guozhen Shen^*
, Xin Chen
, Xiangfeng Duan
, Kai Chang
, Ning Dai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

536 Citations (Scopus)

Abstract

We demonstrate the type-II staggered band alignment in MoTe₂/MoS₂ van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe₂/MoS₂ vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe₂/MoS₂ vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.

Original language	English
Pages (from-to)	3852-3858
Number of pages	7
Journal	ACS Nano
Volume	10
Issue number	3
DOIs	https://doi.org/10.1021/acsnano.6b00980
Publication status	Published - 22 Mar 2016
Externally published	Yes

Keywords

MoS
MoTe
interlayer transition
type-II band alignment
van der Waals heterostructure

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10.1021/acsnano.6b00980

Cite this

Zhang, K., Zhang, T., Cheng, G., Li, T., Wang, S., Wei, W., Zhou, X., Yu, W., Sun, Y., Wang, P., Zhang, D., Zeng, C., Wang, X., Hu, W., Fan, H. J., Shen, G., Chen, X., Duan, X., Chang, K., & Dai, N. (2016). Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe₂/MoS₂ van der Waals Heterostructures. ACS Nano, 10(3), 3852-3858. https://doi.org/10.1021/acsnano.6b00980

@article{7015d34773bf447282e4f3eae3d5502c,

title = "Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures",

abstract = "We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.",

keywords = "MoS, MoTe, interlayer transition, type-II band alignment, van der Waals heterostructure",

author = "Kenan Zhang and Tianning Zhang and Guanghui Cheng and Tianxin Li and Shuxia Wang and Wei Wei and Xiaohao Zhou and Weiwei Yu and Yan Sun and Peng Wang and Dong Zhang and Changgan Zeng and Xingjun Wang and Weida Hu and Fan, \{Hong Jin\} and Guozhen Shen and Xin Chen and Xiangfeng Duan and Kai Chang and Ning Dai",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = mar,

day = "22",

doi = "10.1021/acsnano.6b00980",

language = "English",

volume = "10",

pages = "3852--3858",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "3",

}

Zhang, K, Zhang, T, Cheng, G, Li, T, Wang, S, Wei, W, Zhou, X, Yu, W, Sun, Y, Wang, P, Zhang, D, Zeng, C, Wang, X, Hu, W, Fan, HJ, Shen, G, Chen, X, Duan, X, Chang, K & Dai, N 2016, 'Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe₂/MoS₂ van der Waals Heterostructures', ACS Nano, vol. 10, no. 3, pp. 3852-3858. https://doi.org/10.1021/acsnano.6b00980

TY - JOUR

T1 - Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures

AU - Zhang, Kenan

AU - Zhang, Tianning

AU - Cheng, Guanghui

AU - Li, Tianxin

AU - Wang, Shuxia

AU - Wei, Wei

AU - Zhou, Xiaohao

AU - Yu, Weiwei

AU - Sun, Yan

AU - Wang, Peng

AU - Zhang, Dong

AU - Zeng, Changgan

AU - Wang, Xingjun

AU - Hu, Weida

AU - Fan, Hong Jin

AU - Shen, Guozhen

AU - Chen, Xin

AU - Duan, Xiangfeng

AU - Chang, Kai

AU - Dai, Ning

PY - 2016/3/22

Y1 - 2016/3/22

N2 - We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.

AB - We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.

KW - MoS

KW - MoTe

KW - interlayer transition

KW - type-II band alignment

KW - van der Waals heterostructure

UR - https://www.scopus.com/pages/publications/84961892052

U2 - 10.1021/acsnano.6b00980

DO - 10.1021/acsnano.6b00980

M3 - Article

AN - SCOPUS:84961892052

SN - 1936-0851

VL - 10

SP - 3852

EP - 3858

JO - ACS Nano

JF - ACS Nano

IS - 3

ER -

Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe₂/MoS₂ van der Waals Heterostructures

Abstract

Keywords

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