Interface-induced Berry-curvature dipole and second-order nonlinear Hall effect in two-dimensional Fe5GeTe2

Jinrui Zhong, Huimin Peng, Xiaocui Wang, Qi Feng, Yuqing Hu, Qiuli Li, Yongkai Li, Wei Jiang, Zhiwei Wang, Junxi Duan

Research output: Contribution to journalArticlepeer-review

Abstract

The second-order nonlinear Hall effect (NLHE), driven by the Berry-curvature dipole (BCD), quantum metrics, and disorder-related mechanisms, have potential in energy harvesting and signal doubling. However, for a large class of known materials, in which inversion symmetry is preserved, the BCD and NLHE are strictly zero. Here, we report that, by interface modulation through AlxO3-assisted exfoliation, a strong NLHE is generated in few-layer Fe5GeTe2, in which both the BCD and disorder-related contributions are in principle prohibited due to its R3¯m lattice symmetry. Scaling analysis indicates the existence of a large BCD reaching Λ≈150nm. The negative results from Fe5GeTe2 devices on SiO2 substrates confirm that the interface between Fe5GeTe2 and AlxO3 is responsible for the observed NLHE, revealing an interface-induced BCD, which has never been reported before. Our study provides a feasible way to generate NLHE in materials with inversion symmetry, expanding the material family for NLHE research and inspiring potential applications due to the advantages in mass production.

Original languageEnglish
Article number024044
JournalPhysical Review Applied
Volume21
Issue number2
DOIs
Publication statusPublished - Feb 2024

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