Interface engineering of epitaxial graphene on SiC(0001̄ ) via fluorine intercalation: A first principles study

Chen Si; Gang Zhou; Yuanchang Li; Jian Wu; Wenhui Duan

doi:10.1063/1.3692586

Interface engineering of epitaxial graphene on SiC(0001̄ ) via fluorine intercalation: A first principles study

Chen Si^*, Gang Zhou, Yuanchang Li, Jian Wu, Wenhui Duan

^*Corresponding author for this work

Tsinghua University

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Our first-principles calculations show that a change of carrier type from electron to hole can be achieved in monolayer epitaxial graphene on SiC(000 1 ) by fluorine (F) intercalation. The p-doping level in graphene, however, is not monotonously enhanced as the F coverage increases, and an interesting interface magnetism is observed at the partially passivated interface. Because intercalated F atoms prefer to bond to the substrate than to the graphene, F-intercalation provides a promising way of interface modulation doping to tailor the electronic properties of epitaxial graphene on SiC(000 1 ) without appreciably degrading its intrinsic high mobility.

Original language	English
Article number	103105
Journal	Applied Physics Letters
Volume	100
Issue number	10
DOIs	https://doi.org/10.1063/1.3692586
Publication status	Published - 5 Mar 2012
Externally published	Yes

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abstract = "Our first-principles calculations show that a change of carrier type from electron to hole can be achieved in monolayer epitaxial graphene on SiC(000 1 ) by fluorine (F) intercalation. The p-doping level in graphene, however, is not monotonously enhanced as the F coverage increases, and an interesting interface magnetism is observed at the partially passivated interface. Because intercalated F atoms prefer to bond to the substrate than to the graphene, F-intercalation provides a promising way of interface modulation doping to tailor the electronic properties of epitaxial graphene on SiC(000 1 ) without appreciably degrading its intrinsic high mobility.",

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AU - Wu, Jian

AU - Duan, Wenhui

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N2 - Our first-principles calculations show that a change of carrier type from electron to hole can be achieved in monolayer epitaxial graphene on SiC(000 1 ) by fluorine (F) intercalation. The p-doping level in graphene, however, is not monotonously enhanced as the F coverage increases, and an interesting interface magnetism is observed at the partially passivated interface. Because intercalated F atoms prefer to bond to the substrate than to the graphene, F-intercalation provides a promising way of interface modulation doping to tailor the electronic properties of epitaxial graphene on SiC(000 1 ) without appreciably degrading its intrinsic high mobility.

AB - Our first-principles calculations show that a change of carrier type from electron to hole can be achieved in monolayer epitaxial graphene on SiC(000 1 ) by fluorine (F) intercalation. The p-doping level in graphene, however, is not monotonously enhanced as the F coverage increases, and an interesting interface magnetism is observed at the partially passivated interface. Because intercalated F atoms prefer to bond to the substrate than to the graphene, F-intercalation provides a promising way of interface modulation doping to tailor the electronic properties of epitaxial graphene on SiC(000 1 ) without appreciably degrading its intrinsic high mobility.

UR - https://www.scopus.com/pages/publications/84863357669

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DO - 10.1063/1.3692586

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ER -

Interface engineering of epitaxial graphene on SiC(0001̄ ) via fluorine intercalation: A first principles study

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