Interface chemistry of H2O on GaAs nanowires probed by near ambient pressure X-ray photoelectron spectroscopy

Xueqiang Zhang; Edward Lamere; Xinyu Liu; Jacek K. Furdyna; Sylwia Ptasinska

doi:10.1016/j.cplett.2014.05.007

Interface chemistry of H₂O on GaAs nanowires probed by near ambient pressure X-ray photoelectron spectroscopy

Xueqiang Zhang
, Edward Lamere
, Xinyu Liu
, Jacek K. Furdyna
, Sylwia Ptasinska^*

^*Corresponding author for this work

University of Notre Dame

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Interface chemistry of H₂O on GaAs nanowires is investigated by in situ X-ray photoelectron spectroscopy (XPS) at elevated water vapor pressures (from UHV to 5 mbar) and temperatures (from room temperature to 400 °C). Surface-assisted water dissociation leads to oxidation and hydroxylation of surface Ga atoms. In comparison with the simple planar GaAs(1 0 0) crystal, the H₂O dissociation process on GaAs nanowires is greatly enhanced at elevated pressures and temperatures.

Original language	English
Pages (from-to)	51-55
Number of pages	5
Journal	Chemical Physics Letters
Volume	605-606
DOIs	https://doi.org/10.1016/j.cplett.2014.05.007
Publication status	Published - 17 Jun 2014
Externally published	Yes

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10.1016/j.cplett.2014.05.007

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title = "Interface chemistry of H2O on GaAs nanowires probed by near ambient pressure X-ray photoelectron spectroscopy",

abstract = "Interface chemistry of H2O on GaAs nanowires is investigated by in situ X-ray photoelectron spectroscopy (XPS) at elevated water vapor pressures (from UHV to 5 mbar) and temperatures (from room temperature to 400 °C). Surface-assisted water dissociation leads to oxidation and hydroxylation of surface Ga atoms. In comparison with the simple planar GaAs(1 0 0) crystal, the H2O dissociation process on GaAs nanowires is greatly enhanced at elevated pressures and temperatures.",

author = "Xueqiang Zhang and Edward Lamere and Xinyu Liu and Furdyna, \{Jacek K.\} and Sylwia Ptasinska",

year = "2014",

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doi = "10.1016/j.cplett.2014.05.007",

language = "English",

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pages = "51--55",

journal = "Chemical Physics Letters",

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T1 - Interface chemistry of H2O on GaAs nanowires probed by near ambient pressure X-ray photoelectron spectroscopy

AU - Zhang, Xueqiang

AU - Lamere, Edward

AU - Liu, Xinyu

AU - Furdyna, Jacek K.

AU - Ptasinska, Sylwia

PY - 2014/6/17

Y1 - 2014/6/17

N2 - Interface chemistry of H2O on GaAs nanowires is investigated by in situ X-ray photoelectron spectroscopy (XPS) at elevated water vapor pressures (from UHV to 5 mbar) and temperatures (from room temperature to 400 °C). Surface-assisted water dissociation leads to oxidation and hydroxylation of surface Ga atoms. In comparison with the simple planar GaAs(1 0 0) crystal, the H2O dissociation process on GaAs nanowires is greatly enhanced at elevated pressures and temperatures.

AB - Interface chemistry of H2O on GaAs nanowires is investigated by in situ X-ray photoelectron spectroscopy (XPS) at elevated water vapor pressures (from UHV to 5 mbar) and temperatures (from room temperature to 400 °C). Surface-assisted water dissociation leads to oxidation and hydroxylation of surface Ga atoms. In comparison with the simple planar GaAs(1 0 0) crystal, the H2O dissociation process on GaAs nanowires is greatly enhanced at elevated pressures and temperatures.

UR - https://www.scopus.com/pages/publications/84901624598

U2 - 10.1016/j.cplett.2014.05.007

DO - 10.1016/j.cplett.2014.05.007

M3 - Article

AN - SCOPUS:84901624598

SN - 0009-2614

VL - 605-606

SP - 51

EP - 55

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

Interface chemistry of H₂O on GaAs nanowires probed by near ambient pressure X-ray photoelectron spectroscopy

Abstract

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