Integrated continuous-wave aluminum nitride Raman laser

Xianwen Liu, Changzheng Sun*, Bing Xiong, Lai Wang, Jian Wang, Yanjun Han, Zhibiao Hao, Hongtao Li, Yi Luo, Jianchang Yan, Tongbo Wei, Yun Zhang, Junxi Wang

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

67 Citations (Scopus)

Abstract

Wurtzite aluminum nitride (AlN) is known to exhibit six Raman-active optic phonons, making it appealing for Raman lasing. Here, we demonstrate continuous-wave Raman lasers with a low threshold and a high slope efficiency in high quality factor AlN-on-sapphire microrings. Stokes radiations around 1.7–1.8 μm and cascaded operation into 1.9–2.0 μm are identified with a telecom pump. Two types of Stokes lights with distinct Raman shifts and polarizations are recorded via selective excitation of corresponding optic phonons, in accordance with the Raman selection rules in AlN. The observed lasing behavior is satisfactorily accounted for by a theoretical analysis. Our results indicate that AlN-on-sapphire should be promising for integrated nonlinear optics.

Original languageEnglish
Pages (from-to)893-896
Number of pages4
JournalOptica
Volume4
Issue number8
DOIs
Publication statusPublished - 20 Aug 2017
Externally publishedYes

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