Abstract
Micro-light-emitting diode (Micro-LED) displays, distinguished by their superior brightness, expansive color gamut, and low energy consumption, constitute a significant advancement in next-generation visual technologies. Among various approaches, quantum-dot color conversion (QDCC) has emerged as a particularly promising method for achieving full-color emission in these devices. Nonetheless, substantial challenges remain, including insufficient blue-light absorption and limited photoconversion efficiency. In this study, we report the development of a high-concentration (40 wt.%) perovskite quantum dots (PQDs) photoresist utilizing an acryloyloxypropyl-functionalized polyhedral oligomeric silsesquioxane (A-POSS) monomer. The A-POSS matrix fulfills a dual role: its inorganic siloxane framework provides numerous heterogeneous nucleation sites that facilitate rapid nucleation and uniform PQD growth, while its rigid, cage-like architecture imposes strong spatial confinement, effectively inhibiting PQD aggregation. The resulting PQD-polymer composite film demonstrates exceptional blue-light absorption of 98.45% and a photoconversion efficiency exceeding 45%. Moreover, high-resolution red, green, and blue (RGB) pixel arrays were successfully fabricated through a direct in situ photolithography process. This work offers a practical and efficient strategy for producing high-quality color conversion layers, thereby advancing the integration of QDCC-based Micro-LEDs in sophisticated display applications such as augmented and virtual reality (AR/VR).
| Original language | English |
|---|---|
| Journal | Laser and Photonics Reviews |
| DOIs | |
| Publication status | Accepted/In press - 2026 |
| Externally published | Yes |
Keywords
- display
- perovskite
- photolithography
- photoluminescence
- quantum dots
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