Infrared emissivity behavior of doped CeO2 at high temperature

Jincheng Guo, Jun Lei Yin, Dongxin Gao, Ke Ren*, William Yi Wang, Yiguang Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this study, cerium dioxide (CeO2) materials doped with one (Gd3+, GDC), two (Gd3+ and Na+, GNDC), and three (Gd3+, Na+, and Eu3+, EGNDC) components were, respectively, prepared, and their high-temperature infrared emissivity was investigated through experimental measurements and theoretical calculations. The experimental results show that GDC exhibits the highest oxygen vacancy concentration, highest conductivity, and narrowest band gap; furthermore, it exhibits an ultralow infrared emissivity (0.202 at 600 °C). The band structure calculations reveal that the Fermi level of GDC shows the highest total density of states, and electrons are more likely to enter the conduction band, which increases the conductivity and thus reduces the infrared emissivity. Furthermore, the infrared reflectance decreases gradually with increasing number of doping components, and the highest infrared reflectance and lowest infrared emissivity for GDC are obtained at 3–5 μm. These findings are consistent with the experimental results.

Original languageEnglish
Pages (from-to)42913-42921
Number of pages9
JournalCeramics International
Volume50
Issue number21
DOIs
Publication statusPublished - 1 Nov 2024

Keywords

  • Band structure
  • Doped CeO
  • High-temperature
  • Infrared emissivity

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