TY - GEN
T1 - Influences of crystallization temperature and slurry concentration on stress of PZT thick film prepared by a modified sol-gel method
AU - Ren, Wei
AU - Zhao, Xiuchen
AU - Li, Junhong
PY - 2013
Y1 - 2013
N2 - As a key MEMS transducer materials, PbZr0.52Ti 0.48O3(PZT) piezoelectric thick film should have good piezoelectric properties as well as lower stress. But now few studies on PZT film stress were carried out. The PZT thick films are deposited by a modified sol-gel method, and the influences of crystallization temperature and slurry concentration on stress are investigated in this paper. The result shows that the PZT thick film stress is tensile stress about 100-1000Mpa. With crystallization temperature increasing, thermal stress increases gradually. The stress increases about 3.5 times as the crystallization temperature rises from 600°C to 700°C. With powder concentration of slurry increasing, the stress of PZT thick film becomes smaller. The stress decreases about 7 times as powder concentration of slurry increasing from 1:4.5 to 1:3.5. The relationship between stress of PZT thick films and crystallization temperature is simulated by using the finite element method, and the results of simulation agree well with the experimental results.
AB - As a key MEMS transducer materials, PbZr0.52Ti 0.48O3(PZT) piezoelectric thick film should have good piezoelectric properties as well as lower stress. But now few studies on PZT film stress were carried out. The PZT thick films are deposited by a modified sol-gel method, and the influences of crystallization temperature and slurry concentration on stress are investigated in this paper. The result shows that the PZT thick film stress is tensile stress about 100-1000Mpa. With crystallization temperature increasing, thermal stress increases gradually. The stress increases about 3.5 times as the crystallization temperature rises from 600°C to 700°C. With powder concentration of slurry increasing, the stress of PZT thick film becomes smaller. The stress decreases about 7 times as powder concentration of slurry increasing from 1:4.5 to 1:3.5. The relationship between stress of PZT thick films and crystallization temperature is simulated by using the finite element method, and the results of simulation agree well with the experimental results.
KW - Crystallization temperature
KW - Finite element method
KW - PZT thick films
KW - Slurry concentration
KW - Stress
UR - http://www.scopus.com/inward/record.url?scp=84883724271&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.562-565.952
DO - 10.4028/www.scientific.net/KEM.562-565.952
M3 - Conference contribution
AN - SCOPUS:84883724271
SN - 9783037857397
T3 - Key Engineering Materials
SP - 952
EP - 957
BT - Micro-Nano Technology XIV
PB - Trans Tech Publications Ltd.
T2 - 14th Annual Conference and the 3rd International Conference of the Chinese Society of Micro-Nano Technology, CSMNT 2012
Y2 - 4 November 2012 through 7 November 2012
ER -