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Indium-free perovskite/silicon tandem solar cells with tin oxide recombination layer and electrodes

  • Wei Shi
  • , Shibo Wang
  • , Shumao Wang
  • , Yue Zhang
  • , Xiaoqiong Ren
  • , Cao Yu
  • , Xinya Niu
  • , Bo Gao
  • , Liu Yang
  • , Bowen Yang
  • , Wenhao Li
  • , Xinyao Sun
  • , Jianwei Yu
  • , Jun Zhu
  • , Shengxing Zhou
  • , Yihua Chen
  • , Fengxian Cao
  • , Kun Gao
  • , Chang Wang
  • , Xi Chen
  • Shaofei Yang, Jian Zhou, Chenxu He, Ruy Sebastian Bonilla, Yiliang Wu, Qi Chen, Zijia Li*, Yuan Cheng*, Xinbo Yang*, Xiaohong Zhang*
*Corresponding author for this work
  • Soochow University
  • Monash University
  • Chint New Energy Technology Co. Ltd.
  • Wuxi EliTe Solar Co.
  • Suzhou Maxwell Technologies Co., Ltd.
  • University of Oxford
  • Beijing Institute of Technology
  • Suzhou National Laboratory

Research output: Contribution to journalArticlepeer-review

Abstract

Indium-based transparent conductive oxides are widely used as electrodes and recombination layers in perovskite/silicon tandem solar cells, yet their scalability is constrained by indium scarcity and sputtering-induced damage. We report high-efficiency and stable indium-free perovskite/silicon tandem solar cells enabled by reactive plasma deposited tin oxide (RPD-SnOx). For RPD-SnOx as the recombination layer, we achieved a certified efficiency of 33.6%. Fully indium-free tandems that used RPD-SnOx as both recombination layer and electrodes delivered a champion power conversion efficiency of 33.2% (1 square centimeter) and a minimodule with a certified efficiency of 31.0% (207.9 square centimeters). Dense and uniform self-assembled monolayer anchoring enabled by RPD-SnOx suppressed nonradiative recombination and reduced halide migration. Indium-free minimodules exhibited high thermal, damp-heat, and outdoor operational stability and retained 65% of their maximum initial efficiency after 105 days of outdoor operation.

Original languageEnglish
Pages (from-to)200-206
Number of pages7
JournalScience
Volume393
Issue number6807
DOIs
Publication statusPublished - 9 Jul 2026
Externally publishedYes

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