In Situ Implanting of Single Tungsten Sites into Defective UiO-66(Zr) by Solvent-Free Route for Efficient Oxidative Desulfurization at Room Temperature

  • Gan Ye
  • , Hanlu Wang
  • , Wenxing Chen
  • , Hongqi Chu
  • , Jinshan Wei
  • , Dagang Wang
  • , Jin Wang*
  • , Yadong Li
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Design of single-site catalysts with catalytic sites at atomic-scale and high atom utilization, provides new opportunities to gain superior catalytic performance for targeted reactions. In this contribution, we report a one-pot green approach for in situ implanting of single tungsten sites (up to 12.7 wt.%) onto the nodes of defective UiO-66(Zr) structure via forming Zr-O-W bonds under solvent-free condition. The catalysts displayed extraordinary activity for the oxidative removal of sulfur compounds (1000 ppm S) at room temperature within 30 min. The turnover frequency (TOF) value can reach 44.0 h−1 at 30 °C, which is 109.0, 12.3 and 1.2 times higher than that of pristine UiO-66(Zr), WO3, and WCl6 (homogeneous catalyst). Theoretical and experimental studies show that the anchored W sites can react with oxidant readily and generate WVI-peroxo intermediates that determine the reaction activity. Our work not only manifests the application of SSCs in the field of desulfurization of fuel oil but also opens a new solvent-free avenue for fabricating MOFs based SSCs.

Original languageEnglish
Pages (from-to)20318-20324
Number of pages7
JournalAngewandte Chemie - International Edition
Volume60
Issue number37
DOIs
Publication statusPublished - 6 Sept 2021

Keywords

  • UiO-66(Zr)
  • oxidative desulfurization
  • single site
  • solvent-free
  • tungsten

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