In-situ atomic-level observation of reversible first-order transition in Hf0.5Zr0.5O ferroelectric film

Yonghui Zheng*, Tianjiao Xin, Jing Yang, Yunzhe Zheng, Zhaomeng Gao, Yiwei Wang, Yilin Xu, Yan Cheng, Kai Du, Diqing Su, Ruiwen Shao, Bingxing Zhou, Zhen Yuan, Qilan Zhong, Cheng Liu, Rong Huang, Xiaodong Tang, Chungang Duan, Sannian Song, Zhitang SongHangbing Lyu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Citations (Scopus)

Abstract

In this work, we revealed the dynamic process of atomic structure transitions of ferroelectric (FE) Hf0.5 Zr0.5 O2 (HZO) film across Curie temperature { mathrm{T}}-{ mathrm{c}} in spherical aberration corrected transmission electron microscope (Cs-TEM) with in-situ controlled heating and cooling. We have the following new observations: (1) A first-order transition between polar orthorhombic (o-) and nonpolar tetragonal (t-) phases occurs as heating up to { mathrm{T}}-{ mathrm{c}}, while the reverse process is triggered by cooling with obvious thermal hysteresis ( Delta mathrm{T} approx 298{o} mathrm{C}); (2) Monoclinic (m-) phase contributes to the stability of o-structure by introducing local compressive stress; (3) The cooling t-to-o transition is identified as martensitic-like transformation, therefore increasing the phase change driving force would be helpful to FE enhancement. This work provides solid evidences on structure transitions near { mathrm{T}}-{ mathrm{c}} of HZO film at atomic-scale, laying foundation for understanding the physical nature of ferroelectricity in hafnium oxide materials.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages631-634
Number of pages4
ISBN (Electronic)9781665489591
DOIs
Publication statusPublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

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