In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

Xiangbin Cai*, Chao Chen, Lin Xie, Changan Wang, Zixin Gui, Yuan Gao, Ulrich Kentsch, Guofu Zhou, Xingsen Gao, Yu Chen, Shengqiang Zhou, Weibo Gao, Jun Ming Liu, Ye Zhu, Deyang Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antiphase states, and their hybridization into a single domain wall still remain elusive. Here we demonstrate the facile fabrication of antiphase boundaries in BiFeO3 thin films using a He-ion implantation process. Cross-sectional electron microscopy, spectroscopy and piezoresponse force measurement reveal the creation of a continuous in-plane charged antiphase boundaries around the implanted depth and a variety of atomic bonding configurations at the antiphase interface, showing the atomically sharp 180° polarization reversal across the boundary. Therefore, this work not only inspires a domain-wall fabrication strategy using He-ion implantation, which is compatible with the wafer-scale patterning, but also provides atomic-scale structural insights for its future utilization in domain-wall nanoelectronics.

Original languageEnglish
Article number8174
JournalNature Communications
Volume14
Issue number1
DOIs
Publication statusPublished - Dec 2023
Externally publishedYes

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