Improving the band alignment at PtSe2 grain boundaries with selective adsorption of TCNQ

Yanhui Hou, Ziqiang Xu, Yan Shao, Linlu Wu, Zhongliu Liu, Genyu Hu, Wei Ji, Jingsi Qiao*, Xu Wu*, Hong Jun Gao, Yeliang Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Grain boundaries in two-dimensional (2D) semiconductors generally induce distorted band alignment and interfacial charge, which impair their electronic properties for device applications. Here, we report the improvement of band alignment at the grain boundaries of PtSe2, a 2D semiconductor, with selective adsorption of a presentative organic acceptor, tetracyanoquinodimethane (TCNQ). TCNQ molecules show selective adsorption at the PtSe2 grain boundary with strong interfacial charge. The adsorption of TCNQ distinctly improves the band alignment at the PtSe2 grain boundaries. With the charge transfer between the grain boundary and TCNQ, the local charge is inhibited, and the band bending at the grain boundary is suppressed, as revealed by the scanning tunneling microscopy and spectroscopy (STM/S) results. Our finding provides an effective method for the advancement of the band alignment at the grain boundary by functional molecules, improving the electronic properties of 2D semiconductors for their future applications. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)3358-3363
Number of pages6
JournalNano Research
Volume16
Issue number2
DOIs
Publication statusPublished - Feb 2023

Keywords

  • Organic-two-dimensional (2D) heterostructure
  • PtSe
  • band alignment
  • grain boundary
  • scanning tunneling microscopy (STM)

Fingerprint

Dive into the research topics of 'Improving the band alignment at PtSe2 grain boundaries with selective adsorption of TCNQ'. Together they form a unique fingerprint.

Cite this