Improvement of ohmic contact to P-type GaN using two-step activation processing

Zhi Nong Yu; Wei Xue; Jong Wook Seo; Soon Jae Yu

doi:10.1117/12.572520

Improvement of ohmic contact to P-type GaN using two-step activation processing

Zhi Nong Yu^*, Wei Xue, Jong Wook Seo, Soon Jae Yu

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A two-step rapid thermal annealing (RTA) process was investigated for electrical activation of magnesium doped GaN layer. The samples were studied by room temperature Hall measurements and I-V curve. In the two-step RTA process, the first low temperature step (600°C) with a long annealing time (4 min) was followed by the second high temperature (850°C) step with a short annealing time. A hole concentration of 1.39×10¹⁸ cm ^-3 was achieved for the activated sample. And the specific contact resistance for Ni/Au-contacted p-GaN was determined to be 1.8×10 ^-4Ω .cm², These results show that the two-step RTA process significantly improves the electrical properties of P-GaN layer compared to the one-step RTA process.

Original language	English
Article number	27
Pages (from-to)	255-258
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5624
DOIs	https://doi.org/10.1117/12.572520
Publication status	Published - 2005
Event	Semiconductor and Organic Optoelectronic Materials and Devices - Beijing, China Duration: 9 Nov 2004 → 11 Nov 2004

Keywords

GaN
Ohmic contact
Rapid thermal annealing

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10.1117/12.572520

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title = "Improvement of ohmic contact to P-type GaN using two-step activation processing",

abstract = "A two-step rapid thermal annealing (RTA) process was investigated for electrical activation of magnesium doped GaN layer. The samples were studied by room temperature Hall measurements and I-V curve. In the two-step RTA process, the first low temperature step (600°C) with a long annealing time (4 min) was followed by the second high temperature (850°C) step with a short annealing time. A hole concentration of 1.39×1018 cm -3 was achieved for the activated sample. And the specific contact resistance for Ni/Au-contacted p-GaN was determined to be 1.8×10 -4Ω .cm2, These results show that the two-step RTA process significantly improves the electrical properties of P-GaN layer compared to the one-step RTA process.",

keywords = "GaN, Ohmic contact, Rapid thermal annealing",

author = "Yu, {Zhi Nong} and Wei Xue and Seo, {Jong Wook} and Yu, {Soon Jae}",

year = "2005",

doi = "10.1117/12.572520",

language = "English",

volume = "5624",

pages = "255--258",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "Semiconductor and Organic Optoelectronic Materials and Devices ; Conference date: 09-11-2004 Through 11-11-2004",

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TY - JOUR

T1 - Improvement of ohmic contact to P-type GaN using two-step activation processing

AU - Yu, Zhi Nong

AU - Xue, Wei

AU - Seo, Jong Wook

AU - Yu, Soon Jae

PY - 2005

Y1 - 2005

N2 - A two-step rapid thermal annealing (RTA) process was investigated for electrical activation of magnesium doped GaN layer. The samples were studied by room temperature Hall measurements and I-V curve. In the two-step RTA process, the first low temperature step (600°C) with a long annealing time (4 min) was followed by the second high temperature (850°C) step with a short annealing time. A hole concentration of 1.39×1018 cm -3 was achieved for the activated sample. And the specific contact resistance for Ni/Au-contacted p-GaN was determined to be 1.8×10 -4Ω .cm2, These results show that the two-step RTA process significantly improves the electrical properties of P-GaN layer compared to the one-step RTA process.

AB - A two-step rapid thermal annealing (RTA) process was investigated for electrical activation of magnesium doped GaN layer. The samples were studied by room temperature Hall measurements and I-V curve. In the two-step RTA process, the first low temperature step (600°C) with a long annealing time (4 min) was followed by the second high temperature (850°C) step with a short annealing time. A hole concentration of 1.39×1018 cm -3 was achieved for the activated sample. And the specific contact resistance for Ni/Au-contacted p-GaN was determined to be 1.8×10 -4Ω .cm2, These results show that the two-step RTA process significantly improves the electrical properties of P-GaN layer compared to the one-step RTA process.

KW - GaN

KW - Ohmic contact

KW - Rapid thermal annealing

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U2 - 10.1117/12.572520

DO - 10.1117/12.572520

M3 - Conference article

AN - SCOPUS:17644422248

SN - 0277-786X

VL - 5624

SP - 255

EP - 258

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 27

T2 - Semiconductor and Organic Optoelectronic Materials and Devices

Y2 - 9 November 2004 through 11 November 2004

ER -

Improvement of ohmic contact to P-type GaN using two-step activation processing

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Keywords

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