@inproceedings{8ac01281873a479580cbb1cafa05cc69,
title = "Imaging performance comparison of novel CMOS Low-light-level image sensor and electron multiplying CCD sensor",
abstract = "Due to its advantages on the cost, power and size, the study of the CMOS image sensor is considered as an important direction of the development of low-light-level image sensor. However, the sensitivity of current CMOS image sensor does not satisfy the low-light-level application requirements. This paper introduces several key techniques on how to improve the sensitivity of CMOS image sensors. We introduce a novel CMOS low-light-level image sensor based on Geiger mode avalanche photodiode (GM-APD) and digital TDI technology. Noise characteristics and complete signal-Tonoise ratio(SNR) theoretical models are constructed for both sensors. A comparison of SNR performance of two image sensors is also done by numerical simulation in this paper. The results show that the novel CMOS low-light-level image sensor outperforms EMCCD at the very low light level.",
keywords = "CMOS, EMCCD, Low-light-level imaging, SNR",
author = "Song Yang and Xuxia Zhuang and Fang Xue and Qian Sun and Ningjuan Ruan",
note = "Publisher Copyright: {\textcopyright} 2017 SPIE.; Applied Optics and Photonics China: Optical Sensing and Imaging Technology and Applications, AOPC 2017 ; Conference date: 04-06-2017 Through 06-06-2017",
year = "2017",
doi = "10.1117/12.2285297",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Yadong Jiang and Weibiao Chen and Haimei Gong and Jin Li",
booktitle = "AOPC 2017",
address = "United States",
}