Illumination system design for a three-aspherical-mirror projection camera for extreme-ultraviolet lithography

Yanqiu Li; Hiroo Kinoshita; Takeo Watanabe; Shigeo Irie; Shigeru Shirayone; Shinji Okazaki

doi:10.1364/AO.39.003253

Illumination system design for a three-aspherical-mirror projection camera for extreme-ultraviolet lithography

Yanqiu Li, Hiroo Kinoshita, Takeo Watanabe, Shigeo Irie, Shigeru Shirayone, Shinji Okazaki

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A scanning critical illumination system is designed to couple a synchrotron radiation source to a thre-aspherical-mirror imaging system for extreme ultraviolet lithography. A static illumination area of H × V = 8 mm × 3 mm (where H is horizontal and V is vertical) can be obtained. Uniform intensity distribution and a large ring field of H × V = 150 mm × 3 mm can be achieved by scanning of the mirror of the condenser. The coherence factor (σ) of this illumination system is ∼0.6, with the same beam divergence in both the horizontal and the vertical directions. We describe the performance of the imaging optics at σ = 0.6 to confirm that the illumination optics can meet the requirements for threeaspherical- mirror imaging optics with a feature size of 0.06 μm.

Original language	English
Pages (from-to)	3253-3260
Number of pages	8
Journal	Applied Optics
Volume	39
Issue number	19
DOIs	https://doi.org/10.1364/AO.39.003253
Publication status	Published - 1 Jul 2000
Externally published	Yes

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@article{7c8d99f3aaf74b1cb996291155544c3a,

title = "Illumination system design for a three-aspherical-mirror projection camera for extreme-ultraviolet lithography",

abstract = "A scanning critical illumination system is designed to couple a synchrotron radiation source to a thre-aspherical-mirror imaging system for extreme ultraviolet lithography. A static illumination area of H × V = 8 mm × 3 mm (where H is horizontal and V is vertical) can be obtained. Uniform intensity distribution and a large ring field of H × V = 150 mm × 3 mm can be achieved by scanning of the mirror of the condenser. The coherence factor (σ) of this illumination system is ∼0.6, with the same beam divergence in both the horizontal and the vertical directions. We describe the performance of the imaging optics at σ = 0.6 to confirm that the illumination optics can meet the requirements for threeaspherical- mirror imaging optics with a feature size of 0.06 μm.",

author = "Yanqiu Li and Hiroo Kinoshita and Takeo Watanabe and Shigeo Irie and Shigeru Shirayone and Shinji Okazaki",

year = "2000",

month = jul,

day = "1",

doi = "10.1364/AO.39.003253",

language = "English",

volume = "39",

pages = "3253--3260",

journal = "Applied Optics",

issn = "1559-128X",

publisher = "Optica Publishing Group",

number = "19",

}

TY - JOUR

T1 - Illumination system design for a three-aspherical-mirror projection camera for extreme-ultraviolet lithography

AU - Li, Yanqiu

AU - Kinoshita, Hiroo

AU - Watanabe, Takeo

AU - Irie, Shigeo

AU - Shirayone, Shigeru

AU - Okazaki, Shinji

PY - 2000/7/1

Y1 - 2000/7/1

N2 - A scanning critical illumination system is designed to couple a synchrotron radiation source to a thre-aspherical-mirror imaging system for extreme ultraviolet lithography. A static illumination area of H × V = 8 mm × 3 mm (where H is horizontal and V is vertical) can be obtained. Uniform intensity distribution and a large ring field of H × V = 150 mm × 3 mm can be achieved by scanning of the mirror of the condenser. The coherence factor (σ) of this illumination system is ∼0.6, with the same beam divergence in both the horizontal and the vertical directions. We describe the performance of the imaging optics at σ = 0.6 to confirm that the illumination optics can meet the requirements for threeaspherical- mirror imaging optics with a feature size of 0.06 μm.

AB - A scanning critical illumination system is designed to couple a synchrotron radiation source to a thre-aspherical-mirror imaging system for extreme ultraviolet lithography. A static illumination area of H × V = 8 mm × 3 mm (where H is horizontal and V is vertical) can be obtained. Uniform intensity distribution and a large ring field of H × V = 150 mm × 3 mm can be achieved by scanning of the mirror of the condenser. The coherence factor (σ) of this illumination system is ∼0.6, with the same beam divergence in both the horizontal and the vertical directions. We describe the performance of the imaging optics at σ = 0.6 to confirm that the illumination optics can meet the requirements for threeaspherical- mirror imaging optics with a feature size of 0.06 μm.

UR - http://www.scopus.com/inward/record.url?scp=0037815088&partnerID=8YFLogxK

U2 - 10.1364/AO.39.003253

DO - 10.1364/AO.39.003253

M3 - Article

AN - SCOPUS:0037815088

SN - 1559-128X

VL - 39

SP - 3253

EP - 3260

JO - Applied Optics

JF - Applied Optics

IS - 19

ER -

Illumination system design for a three-aspherical-mirror projection camera for extreme-ultraviolet lithography

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