Abstract
We propose a novel hybrid phase-locked loop (PLL) architecture for overcoming the trade-off between fast locking time and low spur. To reduce the settling time and meanwhile suppress the reference spurs, we employ a wide-band single-path PLL and a narrow-band dual-path PLL in a transient state and a steady state, respectively, by changing the loop bandwidth according to the gain of voltage controlled oscillator (VCO) and the resister of the loop filter. The hybrid PLL is implemented in a 0.18-μm complementary metal oxide semiconductor (CMOS) process with a total die area of 1.4×0.46 mm 2. The measured results exhibit a reference spur level of lower than -73 dB with a reference frequency of 10 MHz and a settling time of 20 μs with 40 MHz frequency jump at 2 GHz. The total power consumption of the hybrid PLL is less than 27 mW with a supply voltage of 1.8 V.
| Original language | English |
|---|---|
| Article number | 078401 |
| Journal | Chinese Physics B |
| Volume | 23 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Jul 2014 |
Keywords
- complementary metal oxide semiconductor (CMOS)
- fast locking time
- low spur
- phase-locked loop (PLL)
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