Hybrid Nanocomposites of All-Inorganic Halide Perovskites with Polymers for High-Performance Field-Effect-Transistor-Based Photodetectors: An Experimental and Simulation Study

All-inorganic halide perovskites have recently emerged as a promising candidate for new-generation optoelectronics. The device performance of solution-processed photodetectors critically depends on the surface morphology and film features, however, the behind mechanism is not clear till now. In this paper, a feasible method for surface-passivating all-inorganic halide perovskites with poly(3-hexylthiophene) (P3HT) as the photoactive layer for field-effect transistor (FET)-based photodetectors is presented, and the underlying mechanisms to enhance device performance are investigated by experimental and simulating study. As the result, a high photoresponsivity of 469 A W⁻¹ with a specific detectivity of 1.34 × 10¹⁴ Jones is obtained under 0.4 mW cm⁻² 405 nm illumination for FET-based photodetector Au(S&D)/CsPbBr₃:P3HT/PMMA/Al(G). This experimental and simulating study shows that the enhanced-performance origins from improving the photogenerated charge carriers transportation and suppressing the dark current through the photodetectors.