Humidity sensing characteristics of graphene and MoS2as well as their heterostructures with different stacking configurations

  • Hongliang Ma
  • , Qiang Gao
  • , Zhe Zhang
  • , Kaige Yang
  • , Jiayin Li
  • , Yabin Chen
  • , Jie Ding*
  • , Wendong Zhang*
  • , Xuge Fan*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The ultra-high specific surface area of two-dimensional (2D) materials boosts the development of electronic devices based on 2D material films in gas sensing and humidity sensing. Here, we constructed four distinct humidity sensor architectures based on atomically thin graphene and molybdenum disulfide, encompassing monolayer graphene, monolayer MoS2, graphene/MoS2 heterostructure, and reverse-stacked MoS2/graphene heterostructure configurations. We systematically elucidated the evolution of the humidity response characteristics of the above 2D membranes during the transition from individual materials to heterostructures. The results revealed that within the range from 15% RH to 55% RH, the monolayer MoS2-based humidity sensor demonstrated exceptional response characteristics with a remarkable resistance change rate (ΔR/R0) of 271.1%, significantly surpassing the resistance change rates of the humidity sensors based on monolayer graphene (1.98%), graphene/MoS2 heterostructures (1.69%), and MoS2/graphene heterostructures (1.16%). This pronounced performance disparity highlighted the crucial role of two-dimensional material interface engineering in modulating humidity sensing capabilities, providing important theoretical foundations and practical guidance for developing high-performance humidity sensors based on two-dimensional materials.

Original languageEnglish
JournalNanoscale
DOIs
Publication statusAccepted/In press - 2026

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