Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by van der Waals Integration

Jian Guo; Laiyuan Wang; Yuan Liu; Zipeng Zhao; Enbo Zhu; Zhaoyang Lin; Peiqi Wang; Chuancheng Jia; Shengxue Yang; Sung Joon Lee; Wei Huang; Yu Huang; Xiangfeng Duan

doi:10.1016/j.matt.2020.01.011

Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by van der Waals Integration

Jian Guo, Laiyuan Wang, Yuan Liu, Zipeng Zhao, Enbo Zhu, Zhaoyang Lin, Peiqi Wang, Chuancheng Jia, Shengxue Yang, Sung Joon Lee, Wei Huang^*, Yu Huang, Xiangfeng Duan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

To adapt a thin and fragile active layer for continued memristor scaling requires alternative damage-free metal-integration strategies. By adopting a van der Waals (vdW) metal-integration approach, this work constructs memristors with vdW contacts between metal and thin native oxide on 2D material SnSe. The “low-energy” vdW-integration process preserves the delicate SnO_x and enables reliable memristors with low operation voltage, excellent endurance, and retention. This strategy defines a unique vdW-integration solution for fragile memristive materials.

Original language	English
Pages (from-to)	965-976
Number of pages	12
Journal	Matter
Volume	2
Issue number	4
DOIs	https://doi.org/10.1016/j.matt.2020.01.011
Publication status	Published - 1 Apr 2020
Externally published	Yes

Keywords

2D materials
MAP4: Demonstrate
artificial synapse
heterosynaptic plasticity
memristor
memtransistor
neuromorphic electronics
resistive random-access memory (RRAM)
van der Waals (vdW) contact

Access to Document

10.1016/j.matt.2020.01.011

Cite this

@article{114e56ac15364feeb5ec3318181b70d1,

title = "Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by van der Waals Integration",

abstract = "To adapt a thin and fragile active layer for continued memristor scaling requires alternative damage-free metal-integration strategies. By adopting a van der Waals (vdW) metal-integration approach, this work constructs memristors with vdW contacts between metal and thin native oxide on 2D material SnSe. The “low-energy” vdW-integration process preserves the delicate SnOx and enables reliable memristors with low operation voltage, excellent endurance, and retention. This strategy defines a unique vdW-integration solution for fragile memristive materials.",

keywords = "2D materials, MAP4: Demonstrate, artificial synapse, heterosynaptic plasticity, memristor, memtransistor, neuromorphic electronics, resistive random-access memory (RRAM), van der Waals (vdW) contact",

author = "Jian Guo and Laiyuan Wang and Yuan Liu and Zipeng Zhao and Enbo Zhu and Zhaoyang Lin and Peiqi Wang and Chuancheng Jia and Shengxue Yang and Lee, {Sung Joon} and Wei Huang and Yu Huang and Xiangfeng Duan",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Inc.",

year = "2020",

month = apr,

day = "1",

doi = "10.1016/j.matt.2020.01.011",

language = "English",

volume = "2",

pages = "965--976",

journal = "Matter",

issn = "2590-2393",

publisher = "Cell Press",

number = "4",

}

TY - JOUR

T1 - Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by van der Waals Integration

AU - Guo, Jian

AU - Wang, Laiyuan

AU - Liu, Yuan

AU - Zhao, Zipeng

AU - Zhu, Enbo

AU - Lin, Zhaoyang

AU - Wang, Peiqi

AU - Jia, Chuancheng

AU - Yang, Shengxue

AU - Lee, Sung Joon

AU - Huang, Wei

AU - Huang, Yu

AU - Duan, Xiangfeng

PY - 2020/4/1

Y1 - 2020/4/1

N2 - To adapt a thin and fragile active layer for continued memristor scaling requires alternative damage-free metal-integration strategies. By adopting a van der Waals (vdW) metal-integration approach, this work constructs memristors with vdW contacts between metal and thin native oxide on 2D material SnSe. The “low-energy” vdW-integration process preserves the delicate SnOx and enables reliable memristors with low operation voltage, excellent endurance, and retention. This strategy defines a unique vdW-integration solution for fragile memristive materials.

AB - To adapt a thin and fragile active layer for continued memristor scaling requires alternative damage-free metal-integration strategies. By adopting a van der Waals (vdW) metal-integration approach, this work constructs memristors with vdW contacts between metal and thin native oxide on 2D material SnSe. The “low-energy” vdW-integration process preserves the delicate SnOx and enables reliable memristors with low operation voltage, excellent endurance, and retention. This strategy defines a unique vdW-integration solution for fragile memristive materials.

KW - 2D materials

KW - MAP4: Demonstrate

KW - artificial synapse

KW - heterosynaptic plasticity

KW - memristor

KW - memtransistor

KW - neuromorphic electronics

KW - resistive random-access memory (RRAM)

KW - van der Waals (vdW) contact

UR - http://www.scopus.com/inward/record.url?scp=85082512901&partnerID=8YFLogxK

U2 - 10.1016/j.matt.2020.01.011

DO - 10.1016/j.matt.2020.01.011

M3 - Article

AN - SCOPUS:85082512901

SN - 2590-2393

VL - 2

SP - 965

EP - 976

JO - Matter

JF - Matter

IS - 4

ER -

Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by van der Waals Integration

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this