High Uniformity Ferroelectric MoS₂Nonvolatile Memory Array

Engineering

• Memory Array 100%
• Field-Effect Transistor 100%
• Molybdenum Disulfide 100%
• Chemical Vapor Deposition 33%
• Vapor Deposition 33%
• Monolayer 33%
• Two-Dimensional Materials 33%
• Integrated Circuit 33%
• Dielectric Layer 33%
• Current Ratio 33%
• Nonvolatile Memory 33%
• Retention Time 33%

Material Science

• Ferroelectric Material 100%
• Field Effect Transistor 60%
• Chemical Vapor Deposition 20%
• Monolayers 20%
• Two-Dimensional Material 20%
• Dielectric Material 20%
• Electronic Circuit 20%