Skip to main navigation Skip to search Skip to main content

High temperature digital image correlation evaluation of in-situ failure mechanism: An experimental framework with application to C/SiC composites

  • W. G. Mao*
  • , J. Chen
  • , M. S. Si
  • , R. F. Zhang
  • , Q. S. Ma
  • , D. N. Fang
  • , X. Chen
  • *Corresponding author for this work
  • XiangTan University
  • Columbia University
  • National University of Defense Technology
  • Peking University

Research output: Contribution to journalArticlepeer-review

Abstract

A high temperature digital image correlation (DIC) technique was developed, which was applied to study the in-situ fracture behavior of a carbon fibre reinforced silicon carbide matrix (C/SiC) composite. The displacement distribution and cracking information of the C/SiC single edge notched beam specimen can be monitored real-time, thanks to the improved DIC technique with special speckle patterns that can reach up to 1600 °C. The results showed that the brittle to ductile transition temperature of C/SiC composites is about 1300 °C. The new failure mechanisms of C/SiC composites at different experimental temperatures were further verified with the aid of X-ray diffraction and scanning electron microscope (SEM) techniques. In addition, the relationships between the fracture toughness, first-crack strength of C/SiC composites and environmental temperature were deduced. The proposed experimental method and testing results may shed some light on assessing the reliability and durability of C/SiC composites at high temperatures.

Original languageEnglish
Pages (from-to)26-34
Number of pages9
JournalMaterials Science and Engineering: A
Volume665
DOIs
Publication statusPublished - 17 May 2016
Externally publishedYes

Keywords

  • Brittle to ductile transition
  • C/SiC composites
  • Digital image correlation
  • High-temperature testing
  • Mechanical properties

Fingerprint

Dive into the research topics of 'High temperature digital image correlation evaluation of in-situ failure mechanism: An experimental framework with application to C/SiC composites'. Together they form a unique fingerprint.

Cite this