High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires

Zheng Lou; Ludong Li; Guozhen Shen

doi:10.1007/s12274-015-0723-0

High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa₂O₄ nanowires

Zheng Lou, Ludong Li, Guozhen Shen^*

^*Corresponding author for this work

CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

ZnGa₂O₄ nanowires (NWs) as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as highperformance ultraviolet (UV) photodetectors. A single-nanowire UV photodetector fabricated on a rigid silicon substrate exhibited excellent spectral responsivity (3,174 A/W) and high external quantum efficiency (1.1 × 106%) at 350 nm UV light illumination. A flexible single-nanowire photodetector on a polyethylene terephthalate (PET) substrate was also fabricated and showed similar properties. The as-fabricated flexible photodetector exhibited stable electrical properties and mechanical flexibility under different bending curvatures over many cycles, indicating its potential application in future flexible photoelectronic devices. [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	2162-2169
Number of pages	8
Journal	Nano Research
Volume	8
Issue number	7
DOIs	https://doi.org/10.1007/s12274-015-0723-0
Publication status	Published - 25 Jul 2015
Externally published	Yes

Keywords

UV photodetectors
ZnGaO
flexible electronics
nanowires
ternary oxide

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10.1007/s12274-015-0723-0

Cite this

@article{3493a3d740754f4c995af0d26fdf302a,

title = "High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires",

abstract = "ZnGa2O4 nanowires (NWs) as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as highperformance ultraviolet (UV) photodetectors. A single-nanowire UV photodetector fabricated on a rigid silicon substrate exhibited excellent spectral responsivity (3,174 A/W) and high external quantum efficiency (1.1 × 106%) at 350 nm UV light illumination. A flexible single-nanowire photodetector on a polyethylene terephthalate (PET) substrate was also fabricated and showed similar properties. The as-fabricated flexible photodetector exhibited stable electrical properties and mechanical flexibility under different bending curvatures over many cycles, indicating its potential application in future flexible photoelectronic devices. [Figure not available: see fulltext.]",

keywords = "UV photodetectors, ZnGaO, flexible electronics, nanowires, ternary oxide",

author = "Zheng Lou and Ludong Li and Guozhen Shen",

note = "Publisher Copyright: {\textcopyright} 2015, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.",

year = "2015",

month = jul,

day = "25",

doi = "10.1007/s12274-015-0723-0",

language = "English",

volume = "8",

pages = "2162--2169",

journal = "Nano Research",

issn = "1998-0124",

publisher = "Tsinghua University Press",

number = "7",

}

TY - JOUR

T1 - High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires

AU - Lou, Zheng

AU - Li, Ludong

AU - Shen, Guozhen

PY - 2015/7/25

Y1 - 2015/7/25

N2 - ZnGa2O4 nanowires (NWs) as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as highperformance ultraviolet (UV) photodetectors. A single-nanowire UV photodetector fabricated on a rigid silicon substrate exhibited excellent spectral responsivity (3,174 A/W) and high external quantum efficiency (1.1 × 106%) at 350 nm UV light illumination. A flexible single-nanowire photodetector on a polyethylene terephthalate (PET) substrate was also fabricated and showed similar properties. The as-fabricated flexible photodetector exhibited stable electrical properties and mechanical flexibility under different bending curvatures over many cycles, indicating its potential application in future flexible photoelectronic devices. [Figure not available: see fulltext.]

AB - ZnGa2O4 nanowires (NWs) as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as highperformance ultraviolet (UV) photodetectors. A single-nanowire UV photodetector fabricated on a rigid silicon substrate exhibited excellent spectral responsivity (3,174 A/W) and high external quantum efficiency (1.1 × 106%) at 350 nm UV light illumination. A flexible single-nanowire photodetector on a polyethylene terephthalate (PET) substrate was also fabricated and showed similar properties. The as-fabricated flexible photodetector exhibited stable electrical properties and mechanical flexibility under different bending curvatures over many cycles, indicating its potential application in future flexible photoelectronic devices. [Figure not available: see fulltext.]

KW - UV photodetectors

KW - ZnGaO

KW - flexible electronics

KW - nanowires

KW - ternary oxide

UR - http://www.scopus.com/inward/record.url?scp=84937976750&partnerID=8YFLogxK

U2 - 10.1007/s12274-015-0723-0

DO - 10.1007/s12274-015-0723-0

M3 - Article

AN - SCOPUS:84937976750

SN - 1998-0124

VL - 8

SP - 2162

EP - 2169

JO - Nano Research

JF - Nano Research

IS - 7

ER -

High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa₂O₄ nanowires

Abstract

Keywords

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