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High-Performance KV3Sb5/WSe2 Van Der Waals Photodetectors

  • Yang Yang
  • , Shaofeng Rao
  • , Yuxuan Hou
  • , Jiabo Liu
  • , Deng Hu
  • , Yufei Guo
  • , Jianzhou Zhao
  • , Hechen Ren
  • , Zhiwei Wang*
  • , Fan Yang*
  • *Corresponding author for this work
  • Tianjin University
  • Beijing Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

Kagome metals AV3Sb5 (A = K, Rb, Cs) have recently emerged as a promising platform for exploring correlated and topological quantum states, yet their potential for optoelectronic applications remains largely unexplored. Here, we report high-performance photodetectors based on van der Waals KV3Sb5/WSe2 heterojunctions. A high-quality Schottky interface readily forms between KV3Sb5 and WSe2, enabling efficient separation and transport of photoinduced carriers. Under 520 nm illumination, the device achieves an open-circuit voltage up to 0.6 V, a responsivity of 809 mA W−1, and a fast response time of 18.3 µs. This work demonstrates the promising optoelectronic applications of Kagome metals and highlights the potential of KV3Sb5-based van der Waals heterostructures for high-performance photodetection.

Original languageEnglish
JournalSmall
DOIs
Publication statusAccepted/In press - 2026
Externally publishedYes

Keywords

  • KVSb
  • kagome metal
  • photodetector
  • van der Waals heterojunction

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