Abstract
The scattering characteristics of the II-VI semiconductor were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure. The method avoids the difficulty of solving the complex transcendental equation, and calculates all the eigenvalues and eigenfunctions simultaneously needed for the mode matching treatment in the longitudinal direction. As a result, the whole solution procedure was significantly simplified. A comparison was given between the experimental data and the calculated results obtained with this analysis and the network method, showing very good agreement. The accuracy and efficiency of the present method were verified.
| Original language | English |
|---|---|
| Pages (from-to) | 177-184 |
| Number of pages | 8 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 12 |
| Issue number | 3 |
| Publication status | Published - Jun 1993 |
| Externally published | Yes |
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