High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

Wai Leong Chow; Peng Yu; Fucai Liu; Jinhua Hong; Xingli Wang; Qingsheng Zeng; Chuang Han Hsu; Chao Zhu; Jiadong Zhou; Xiaowei Wang; Juan Xia; Jiaxu Yan; Yu Chen; Di Wu; Ting Yu; Zexiang Shen; Hsin Lin; Chuanhong Jin; Beng Kang Tay; Zheng Liu

doi:10.1002/adma.201602969

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

Wai Leong Chow
, Peng Yu
, Fucai Liu^*
, Jinhua Hong
, Xingli Wang
, Qingsheng Zeng
, Chuang Han Hsu
, Chao Zhu
, Jiadong Zhou
, Xiaowei Wang
, Juan Xia
, Jiaxu Yan
, Yu Chen
, Di Wu
, Ting Yu
, Zexiang Shen
, Hsin Lin
, Chuanhong Jin
, Beng Kang Tay
, Zheng Liu

^*Corresponding author for this work

Nanyang Technological University
Research Techno Plaza Singapore
Zhejiang University
National University of Singapore

Research output: Contribution to journal › Article › peer-review

317 Citations (Scopus)

Abstract

Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe₂), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe₂ show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe₂ to exhibit electron-dominated transport with high mobility (µ_{e (max)} = 216 cm² V⁻¹ s⁻¹) and on/off ratio up to 10³. Hole-dominated-transport PdSe₂ can be obtained by molecular doping using F₄-TCNQ. This pioneer work on PdSe₂ will spark interests in the less explored regime of noble-TMDCs.

Original language	English
Article number	1602969
Journal	Advanced Materials
Volume	29
Issue number	21
DOIs	https://doi.org/10.1002/adma.201602969
Publication status	Published - 6 Jun 2017
Externally published	Yes

Keywords

2D materials
ambipolar
field-effect transistors
high mobility
palladium diselenide

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10.1002/adma.201602969

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Chow, W. L., Yu, P., Liu, F., Hong, J., Wang, X., Zeng, Q., Hsu, C. H., Zhu, C., Zhou, J., Wang, X., Xia, J., Yan, J., Chen, Y., Wu, D., Yu, T., Shen, Z., Lin, H., Jin, C., Tay, B. K., & Liu, Z. (2017). High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics. Advanced Materials, 29(21), Article 1602969. https://doi.org/10.1002/adma.201602969

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title = "High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics",

abstract = "Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (µe (max) = 216 cm2 V−1 s−1) and on/off ratio up to 103. Hole-dominated-transport PdSe2 can be obtained by molecular doping using F4-TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs.",

keywords = "2D materials, ambipolar, field-effect transistors, high mobility, palladium diselenide",

author = "Chow, \{Wai Leong\} and Peng Yu and Fucai Liu and Jinhua Hong and Xingli Wang and Qingsheng Zeng and Hsu, \{Chuang Han\} and Chao Zhu and Jiadong Zhou and Xiaowei Wang and Juan Xia and Jiaxu Yan and Yu Chen and Di Wu and Ting Yu and Zexiang Shen and Hsin Lin and Chuanhong Jin and Tay, \{Beng Kang\} and Zheng Liu",

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doi = "10.1002/adma.201602969",

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T1 - High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

AU - Chow, Wai Leong

AU - Yu, Peng

AU - Liu, Fucai

AU - Hong, Jinhua

AU - Wang, Xingli

AU - Zeng, Qingsheng

AU - Hsu, Chuang Han

AU - Zhu, Chao

AU - Zhou, Jiadong

AU - Wang, Xiaowei

AU - Xia, Juan

AU - Yan, Jiaxu

AU - Chen, Yu

AU - Wu, Di

AU - Yu, Ting

AU - Shen, Zexiang

AU - Lin, Hsin

AU - Jin, Chuanhong

AU - Tay, Beng Kang

AU - Liu, Zheng

PY - 2017/6/6

Y1 - 2017/6/6

N2 - Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (µe (max) = 216 cm2 V−1 s−1) and on/off ratio up to 103. Hole-dominated-transport PdSe2 can be obtained by molecular doping using F4-TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs.

AB - Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (µe (max) = 216 cm2 V−1 s−1) and on/off ratio up to 103. Hole-dominated-transport PdSe2 can be obtained by molecular doping using F4-TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs.

KW - 2D materials

KW - ambipolar

KW - field-effect transistors

KW - high mobility

KW - palladium diselenide

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DO - 10.1002/adma.201602969

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JO - Advanced Materials

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ER -

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

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