High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors

Menglu Chen; Xinzheng Lan; Xin Tang; Yuanyuan Wang; Margaret H. Hudson; Dmitri V. Talapin; Philippe Guyot-Sionnest

doi:10.1021/acsphotonics.9b01050

High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors

Menglu Chen
, Xinzheng Lan
, Xin Tang
, Yuanyuan Wang
, Margaret H. Hudson
, Dmitri V. Talapin^*
, Philippe Guyot-Sionnest

^*Corresponding author for this work

The University of Chicago

Research output: Contribution to journal › Article › peer-review

108 Citations (Scopus)

Abstract

Improved mid-infrared photoconductors based on colloidal HgTe quantum dots are realized using a hybrid ligand exchange and polar phase transfer. The doping can also be controlled n and p by adjusting the HgCl₂ concentration in the ligand exchange process. We compare the photoconductive properties with the prior "solid-state ligand exchange" using ethanedithiol, and we find that the new process affords a ∼100-fold increase of the electron and hole mobility, a ∼100-fold increase in responsivity, and a ∼10-fold increase in detectivity. These photodetector improvements are primarily attributed to the increase in mobility (μ) because the optical properties are mostly unchanged. We show that the specific detectivity (D*) of a photoconductive device is expected to scale as μ. The application potential is further verified by long-term device stability.

Original language	English
Pages (from-to)	2358-2365
Number of pages	8
Journal	ACS Photonics
Volume	6
Issue number	9
DOIs	https://doi.org/10.1021/acsphotonics.9b01050
Publication status	Published - 18 Sept 2019
Externally published	Yes

Keywords

HgTe
colloidal quantum dots
high mobility
mid-infrared
photoconductor

Access to Document

10.1021/acsphotonics.9b01050

Cite this

@article{09203ba9fab64aea971f3ac1c77f71c3,

title = "High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors",

abstract = "Improved mid-infrared photoconductors based on colloidal HgTe quantum dots are realized using a hybrid ligand exchange and polar phase transfer. The doping can also be controlled n and p by adjusting the HgCl2 concentration in the ligand exchange process. We compare the photoconductive properties with the prior {"}solid-state ligand exchange{"} using ethanedithiol, and we find that the new process affords a ∼100-fold increase of the electron and hole mobility, a ∼100-fold increase in responsivity, and a ∼10-fold increase in detectivity. These photodetector improvements are primarily attributed to the increase in mobility (μ) because the optical properties are mostly unchanged. We show that the specific detectivity (D*) of a photoconductive device is expected to scale as μ. The application potential is further verified by long-term device stability.",

keywords = "HgTe, colloidal quantum dots, high mobility, mid-infrared, photoconductor",

author = "Menglu Chen and Xinzheng Lan and Xin Tang and Yuanyuan Wang and Hudson, \{Margaret H.\} and Talapin, \{Dmitri V.\} and Philippe Guyot-Sionnest",

note = "Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = sep,

day = "18",

doi = "10.1021/acsphotonics.9b01050",

language = "English",

volume = "6",

pages = "2358--2365",

journal = "ACS Photonics",

issn = "2330-4022",

publisher = "American Chemical Society",

number = "9",

}

TY - JOUR

T1 - High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors

AU - Chen, Menglu

AU - Lan, Xinzheng

AU - Tang, Xin

AU - Wang, Yuanyuan

AU - Hudson, Margaret H.

AU - Talapin, Dmitri V.

AU - Guyot-Sionnest, Philippe

PY - 2019/9/18

Y1 - 2019/9/18

N2 - Improved mid-infrared photoconductors based on colloidal HgTe quantum dots are realized using a hybrid ligand exchange and polar phase transfer. The doping can also be controlled n and p by adjusting the HgCl2 concentration in the ligand exchange process. We compare the photoconductive properties with the prior "solid-state ligand exchange" using ethanedithiol, and we find that the new process affords a ∼100-fold increase of the electron and hole mobility, a ∼100-fold increase in responsivity, and a ∼10-fold increase in detectivity. These photodetector improvements are primarily attributed to the increase in mobility (μ) because the optical properties are mostly unchanged. We show that the specific detectivity (D*) of a photoconductive device is expected to scale as μ. The application potential is further verified by long-term device stability.

AB - Improved mid-infrared photoconductors based on colloidal HgTe quantum dots are realized using a hybrid ligand exchange and polar phase transfer. The doping can also be controlled n and p by adjusting the HgCl2 concentration in the ligand exchange process. We compare the photoconductive properties with the prior "solid-state ligand exchange" using ethanedithiol, and we find that the new process affords a ∼100-fold increase of the electron and hole mobility, a ∼100-fold increase in responsivity, and a ∼10-fold increase in detectivity. These photodetector improvements are primarily attributed to the increase in mobility (μ) because the optical properties are mostly unchanged. We show that the specific detectivity (D*) of a photoconductive device is expected to scale as μ. The application potential is further verified by long-term device stability.

KW - HgTe

KW - colloidal quantum dots

KW - high mobility

KW - mid-infrared

KW - photoconductor

UR - https://www.scopus.com/pages/publications/85072671780

U2 - 10.1021/acsphotonics.9b01050

DO - 10.1021/acsphotonics.9b01050

M3 - Article

AN - SCOPUS:85072671780

SN - 2330-4022

VL - 6

SP - 2358

EP - 2365

JO - ACS Photonics

JF - ACS Photonics

IS - 9

ER -

High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this