Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

Kai Zhang; Jia Ding; Zheng Lou; Ruiqing Chai; Mianzeng Zhong; Guozhen Shen

doi:10.1039/c7nr06118h

Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

Kai Zhang
, Jia Ding
, Zheng Lou
, Ruiqing Chai
, Mianzeng Zhong
, Guozhen Shen^*

^*Corresponding author for this work

CAS - Institute of Semiconductors
University of Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I_on/I_off ratio of 4.91 × 10³, a high photoconductive gain of 1.10 × 10³, a high detectivity of 1.65 × 10¹³ Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm^-2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

Original language	English
Pages (from-to)	15416-15422
Number of pages	7
Journal	Nanoscale
Volume	9
Issue number	40
DOIs	https://doi.org/10.1039/c7nr06118h
Publication status	Published - 28 Oct 2017
Externally published	Yes

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@article{92810ffb7b684048bd87366eb38b466c,

title = "Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance",

abstract = "Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh Ion/Ioff ratio of 4.91 {\texttimes} 103, a high photoconductive gain of 1.10 {\texttimes} 103, a high detectivity of 1.65 {\texttimes} 1013 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm-2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.",

author = "Kai Zhang and Jia Ding and Zheng Lou and Ruiqing Chai and Mianzeng Zhong and Guozhen Shen",

note = "Publisher Copyright: {\textcopyright} 2017 The Royal Society of Chemistry.",

year = "2017",

month = oct,

day = "28",

doi = "10.1039/c7nr06118h",

language = "English",

volume = "9",

pages = "15416--15422",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

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TY - JOUR

T1 - Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

AU - Zhang, Kai

AU - Ding, Jia

AU - Lou, Zheng

AU - Chai, Ruiqing

AU - Zhong, Mianzeng

AU - Shen, Guozhen

PY - 2017/10/28

Y1 - 2017/10/28

N2 - Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh Ion/Ioff ratio of 4.91 × 103, a high photoconductive gain of 1.10 × 103, a high detectivity of 1.65 × 1013 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm-2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

AB - Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh Ion/Ioff ratio of 4.91 × 103, a high photoconductive gain of 1.10 × 103, a high detectivity of 1.65 × 1013 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm-2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

UR - https://www.scopus.com/pages/publications/85032866494

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DO - 10.1039/c7nr06118h

M3 - Article

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AN - SCOPUS:85032866494

SN - 2040-3364

VL - 9

SP - 15416

EP - 15422

JO - Nanoscale

JF - Nanoscale

IS - 40

ER -

Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

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