Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

Kai Zhang; Jia Ding; Zheng Lou; Ruiqing Chai; Mianzeng Zhong; Guozhen Shen

doi:10.1039/c7nr06118h

Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

Kai Zhang, Jia Ding, Zheng Lou, Ruiqing Chai, Mianzeng Zhong, Guozhen Shen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I_on/I_off ratio of 4.91 × 10³, a high photoconductive gain of 1.10 × 10³, a high detectivity of 1.65 × 10¹³ Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm^-2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

Original language	English
Pages (from-to)	15416-15422
Number of pages	7
Journal	Nanoscale
Volume	9
Issue number	40
DOIs	https://doi.org/10.1039/c7nr06118h
Publication status	Published - 28 Oct 2017
Externally published	Yes

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title = "Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance",

abstract = "Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh Ion/Ioff ratio of 4.91 × 103, a high photoconductive gain of 1.10 × 103, a high detectivity of 1.65 × 1013 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm-2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.",

author = "Kai Zhang and Jia Ding and Zheng Lou and Ruiqing Chai and Mianzeng Zhong and Guozhen Shen",

note = "Publisher Copyright: {\textcopyright} 2017 The Royal Society of Chemistry.",

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doi = "10.1039/c7nr06118h",

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T1 - Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

AU - Zhang, Kai

AU - Ding, Jia

AU - Lou, Zheng

AU - Chai, Ruiqing

AU - Zhong, Mianzeng

AU - Shen, Guozhen

PY - 2017/10/28

Y1 - 2017/10/28

N2 - Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh Ion/Ioff ratio of 4.91 × 103, a high photoconductive gain of 1.10 × 103, a high detectivity of 1.65 × 1013 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm-2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

AB - Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh Ion/Ioff ratio of 4.91 × 103, a high photoconductive gain of 1.10 × 103, a high detectivity of 1.65 × 1013 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm-2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

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DO - 10.1039/c7nr06118h

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SN - 2040-3364

VL - 9

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EP - 15422

JO - Nanoscale

JF - Nanoscale

IS - 40

ER -

Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

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