Heteroepitaxial growth of orientation-ordered ZnS nanowire arrays

Guozhen Shen; Yoshio Bando; Dmitri Golberg; Chongwu Zhou

doi:10.1021/jp8039687

Heteroepitaxial growth of orientation-ordered ZnS nanowire arrays

Guozhen Shen^*, Yoshio Bando, Dmitri Golberg, Chongwu Zhou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Zinc sulfide (ZnS) is an important functional material for electronics and optoelectronics. In this paper, heteroepitaxial growth of ZnS nanowire arrays on Zn₃P₂ crystals, which are structural uniform with preferred (0001) growth directions, was fulfilled by using a simple thermal evaporation method. Studies found that hexagonal ZnS and tetragonal Zn ₃P₂ showed a good orientation relationship of [010]Zn ₃P₂//[12̄10]_ZnS and (101)Zn ₃P₂//(0002)_ZnS, which makes it possible to obtain well-aligned ZnS nanowire arrays epitaxially grown on Zn ₃P₂ crystals. As-grown ZnS nanowire arrays show a strong broad green emission band centered at 554 nm and a weak emission band at about 802 nm. Field-emission studies found that they show good field emissions with a turn-on field of about 3.72 V/μm.

Original language	English
Pages (from-to)	12299-12303
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	112
Issue number	32
DOIs	https://doi.org/10.1021/jp8039687
Publication status	Published - 14 Aug 2008
Externally published	Yes

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title = "Heteroepitaxial growth of orientation-ordered ZnS nanowire arrays",

abstract = "Zinc sulfide (ZnS) is an important functional material for electronics and optoelectronics. In this paper, heteroepitaxial growth of ZnS nanowire arrays on Zn3P2 crystals, which are structural uniform with preferred (0001) growth directions, was fulfilled by using a simple thermal evaporation method. Studies found that hexagonal ZnS and tetragonal Zn 3P2 showed a good orientation relationship of [010]Zn 3P2//[1{\=2}10]ZnS and (101)Zn 3P2//(0002)ZnS, which makes it possible to obtain well-aligned ZnS nanowire arrays epitaxially grown on Zn 3P2 crystals. As-grown ZnS nanowire arrays show a strong broad green emission band centered at 554 nm and a weak emission band at about 802 nm. Field-emission studies found that they show good field emissions with a turn-on field of about 3.72 V/μm.",

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AU - Bando, Yoshio

AU - Golberg, Dmitri

AU - Zhou, Chongwu

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AB - Zinc sulfide (ZnS) is an important functional material for electronics and optoelectronics. In this paper, heteroepitaxial growth of ZnS nanowire arrays on Zn3P2 crystals, which are structural uniform with preferred (0001) growth directions, was fulfilled by using a simple thermal evaporation method. Studies found that hexagonal ZnS and tetragonal Zn 3P2 showed a good orientation relationship of [010]Zn 3P2//[12̄10]ZnS and (101)Zn 3P2//(0002)ZnS, which makes it possible to obtain well-aligned ZnS nanowire arrays epitaxially grown on Zn 3P2 crystals. As-grown ZnS nanowire arrays show a strong broad green emission band centered at 554 nm and a weak emission band at about 802 nm. Field-emission studies found that they show good field emissions with a turn-on field of about 3.72 V/μm.

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Heteroepitaxial growth of orientation-ordered ZnS nanowire arrays

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