Abstract
With the miniaturization of semiconductor devices, heat generation management for Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is of vital importance. High-frequency switching of MOSFETs is a key component in the operation of transformer circuits. Thus, gaining a deeper understanding of MOSFET heat generation under these high-frequency operating conditions is essential. In this study, we present a transformer circuit based on Pulsed Width Modulation (PWM) regulation and provide a reliable method to measure the temperature variation of MOSFET. We found that higher working frequency usually leads to a higher heat accumulation and thus a higher temperature change.
| Original language | English |
|---|---|
| Article number | 152007 |
| Journal | Journal of Physics: Conference Series |
| Volume | 2891 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2024 |
| Event | 4th International Conference on Defence Technology, ICDT 2024 - Xi'an, China Duration: 23 Sept 2024 → 26 Sept 2024 |
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