Heat Generation Measurement of MOSFET in High-Frequency Transformer Circuits

Jiale Cheng, Yinghao Zhang, Xiangqun Cheng, Yang Liu*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

With the miniaturization of semiconductor devices, heat generation management for Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is of vital importance. High-frequency switching of MOSFETs is a key component in the operation of transformer circuits. Thus, gaining a deeper understanding of MOSFET heat generation under these high-frequency operating conditions is essential. In this study, we present a transformer circuit based on Pulsed Width Modulation (PWM) regulation and provide a reliable method to measure the temperature variation of MOSFET. We found that higher working frequency usually leads to a higher heat accumulation and thus a higher temperature change.

Original languageEnglish
Article number152007
JournalJournal of Physics: Conference Series
Volume2891
Issue number15
DOIs
Publication statusPublished - 2024
Event4th International Conference on Defence Technology, ICDT 2024 - Xi'an, China
Duration: 23 Sept 202426 Sept 2024

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