Growth of SiC-AlN whisker with the polytype of 2H

Bo Zhang; Jianbao Li; Huazhang Zhai; Shuxia Zhang

doi:10.1023/A:1014978510214

Growth of SiC-AlN whisker with the polytype of 2H

Bo Zhang^*
, Jianbao Li
, Huazhang Zhai
, Shuxia Zhang

^*Corresponding author for this work

Tsinghua University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the {001} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.

Original language	English
Pages (from-to)	431-434
Number of pages	4
Journal	Journal of Materials Science Letters
Volume	21
Issue number	5
DOIs	https://doi.org/10.1023/A:1014978510214
Publication status	Published - 1 Mar 2002
Externally published	Yes

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title = "Growth of SiC-AlN whisker with the polytype of 2H",

abstract = "2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the \{001\} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.",

author = "Bo Zhang and Jianbao Li and Huazhang Zhai and Shuxia Zhang",

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AU - Zhang, Bo

AU - Li, Jianbao

AU - Zhai, Huazhang

AU - Zhang, Shuxia

PY - 2002/3/1

Y1 - 2002/3/1

N2 - 2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the {001} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.

AB - 2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the {001} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.

UR - https://www.scopus.com/pages/publications/0036505458

U2 - 10.1023/A:1014978510214

DO - 10.1023/A:1014978510214

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SP - 431

EP - 434

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 5

ER -

Growth of SiC-AlN whisker with the polytype of 2H

Abstract

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