Growth of aligned SnS nanowire arrays for near infrared photodetectors

Aligned SnS nanowires arrays were grown via a simple chemical vapor deposition method. As-synthesized SnS nanowires are single crystals grown along the [111] direction. The single SnS nanowire based device showed excellent response to near infrared lights with good responsivity of 267.9 A/W, high external quantum efficiency of 3.12 × 10⁴ % and fast response time. Photodetectors were built on the aligned SnS nanowire arrays, exhibiting a light on/off ratio of 3.6, and the response and decay time of 4.5 and 0.7 s, respectively, to 1064 nm light illumination.