Growth and structural properties of Pb islands on epitaxial graphene on Ru(0001)

L. W. Liu; W. D. Xiao; K. Yang; L. Z. Zhang; Y. H. Jiang; X. M. Fei; S. X. Du; H. J. Gao

doi:10.1021/jp404190c

Growth and structural properties of Pb islands on epitaxial graphene on Ru(0001)

L. W. Liu, W. D. Xiao, K. Yang, L. Z. Zhang, Y. H. Jiang, X. M. Fei, S. X. Du, H. J. Gao^*

^*Corresponding author for this work

CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Structural properties of Pb islands grown on graphene/Ru(0001) at various deposition temperatures (T_D) and annealing temperatures (T _A) are investigated by a low-temperature scanning tunneling microscope. Single-layer Pb islands with a 2 × 2 reconstruction are only formed at T_D of 80 K and disappear with post-annealing to room temperature (RT). It is revealed that a morphological transition of the Pb islands takes place, from irregular shapes to a hexagonal equilibrium shape, with increasing T_D or T_A to RT. Moreover, Pb islands grown at T_D of RT are larger than those grown at a T_D of 80 K and annealed to RT. All Pb islands with a T_A or T_D of RT are (111)-faceted with thicknesses of even-numbered atomic layers and exhibit a weak interaction between Pb and graphene.

Original language	English
Pages (from-to)	22652-22655
Number of pages	4
Journal	Journal of Physical Chemistry C
Volume	117
Issue number	44
DOIs	https://doi.org/10.1021/jp404190c
Publication status	Published - 7 Nov 2013
Externally published	Yes

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title = "Growth and structural properties of Pb islands on epitaxial graphene on Ru(0001)",

abstract = "Structural properties of Pb islands grown on graphene/Ru(0001) at various deposition temperatures (TD) and annealing temperatures (T A) are investigated by a low-temperature scanning tunneling microscope. Single-layer Pb islands with a 2 × 2 reconstruction are only formed at TD of 80 K and disappear with post-annealing to room temperature (RT). It is revealed that a morphological transition of the Pb islands takes place, from irregular shapes to a hexagonal equilibrium shape, with increasing TD or TA to RT. Moreover, Pb islands grown at TD of RT are larger than those grown at a TD of 80 K and annealed to RT. All Pb islands with a TA or TD of RT are (111)-faceted with thicknesses of even-numbered atomic layers and exhibit a weak interaction between Pb and graphene.",

author = "Liu, \{L. W.\} and Xiao, \{W. D.\} and K. Yang and Zhang, \{L. Z.\} and Jiang, \{Y. H.\} and Fei, \{X. M.\} and Du, \{S. X.\} and Gao, \{H. J.\}",

year = "2013",

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doi = "10.1021/jp404190c",

language = "English",

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TY - JOUR

T1 - Growth and structural properties of Pb islands on epitaxial graphene on Ru(0001)

AU - Liu, L. W.

AU - Xiao, W. D.

AU - Yang, K.

AU - Zhang, L. Z.

AU - Jiang, Y. H.

AU - Fei, X. M.

AU - Du, S. X.

AU - Gao, H. J.

PY - 2013/11/7

Y1 - 2013/11/7

N2 - Structural properties of Pb islands grown on graphene/Ru(0001) at various deposition temperatures (TD) and annealing temperatures (T A) are investigated by a low-temperature scanning tunneling microscope. Single-layer Pb islands with a 2 × 2 reconstruction are only formed at TD of 80 K and disappear with post-annealing to room temperature (RT). It is revealed that a morphological transition of the Pb islands takes place, from irregular shapes to a hexagonal equilibrium shape, with increasing TD or TA to RT. Moreover, Pb islands grown at TD of RT are larger than those grown at a TD of 80 K and annealed to RT. All Pb islands with a TA or TD of RT are (111)-faceted with thicknesses of even-numbered atomic layers and exhibit a weak interaction between Pb and graphene.

AB - Structural properties of Pb islands grown on graphene/Ru(0001) at various deposition temperatures (TD) and annealing temperatures (T A) are investigated by a low-temperature scanning tunneling microscope. Single-layer Pb islands with a 2 × 2 reconstruction are only formed at TD of 80 K and disappear with post-annealing to room temperature (RT). It is revealed that a morphological transition of the Pb islands takes place, from irregular shapes to a hexagonal equilibrium shape, with increasing TD or TA to RT. Moreover, Pb islands grown at TD of RT are larger than those grown at a TD of 80 K and annealed to RT. All Pb islands with a TA or TD of RT are (111)-faceted with thicknesses of even-numbered atomic layers and exhibit a weak interaction between Pb and graphene.

UR - https://www.scopus.com/pages/publications/84889851686

U2 - 10.1021/jp404190c

DO - 10.1021/jp404190c

M3 - Article

AN - SCOPUS:84889851686

SN - 1932-7447

VL - 117

SP - 22652

EP - 22655

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 44

ER -

Growth and structural properties of Pb islands on epitaxial graphene on Ru(0001)

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